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CS5N50A4R

更新时间: 2024-10-29 15:19:47
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TO-252

CS5N50A4R 数据手册

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CS5N50 A4R  
R
Electrical CharacteristicsTc= 25unless otherwise specified:  
OFF Characteristics  
Rating  
Typ.  
--  
Unit  
Parameter  
Test Conditions  
Symbol  
Min.  
500  
--  
Max.  
--  
s
VGS=0V, ID=250µA  
Drain to Source Breakdown Voltage  
Bvdss Temperature Coefficient  
V
VDSS  
ID=250uA,Reference25  
0.6  
--  
V/  
µA  
µA  
nA  
ΔBVDSS/ΔTJ  
VDS =500V, VGS= 0V,  
Ta = 25℃  
VDS =400V, VGS= 0V,  
Ta = 125℃  
--  
--  
--  
--  
--  
1
Drain to Source Leakage Current  
IDSS  
--  
100  
100  
-100  
VGS =+30V  
VGS =-30V  
Gate to Source Forward Leakage  
Gate to Source Reverse Leakage  
IGSS(F)  
IGSS(R)  
--  
nA  
--  
ON Characteristics  
Rating  
Parameter  
Test Conditions  
Symbol  
Units  
Min.  
--  
Typ. Max.  
VGS=10V,ID=2.5A  
Drain-to-Source On-Resistance  
Gate Threshold Voltage  
RDS(ON)  
VGS(TH)  
1.3  
--  
1.5  
4.0  
VDS = VGS, ID = 250µA  
2.0  
V
Pulse width tp300µs,δ≤2%  
Dynamic Characteristics  
Rating  
Typ.  
4
Parameter  
Test Conditions  
Symbol  
Units  
S
Min.  
--  
Max.  
--  
VDS=15V, ID =2.5A  
Forward Trans conductance  
Input Capacitance  
gfs  
Ciss  
Coss  
Crss  
--  
584  
61  
--  
VGS = 0V VDS = 25V  
f = 1.0MHz  
Output Capacitance  
--  
--  
pF  
Reverse Transfer Capacitance  
--  
4
--  
Resistive Switching Characteristics  
Rating  
Typ.  
14  
Parameter  
Test Conditions  
Symbol  
Units  
ns  
Min.  
--  
Max.  
--  
Turn-on Delay Time  
Rise Time  
td(ON)  
tr  
td(OFF)  
tf  
--  
18  
--  
ID =5A VDD = 250V  
RG =10Ω  
Turn-Off Delay Time  
Fall Time  
--  
32  
--  
--  
11  
--  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain (Miller)Charge  
Qg  
--  
12.6  
3.1  
4.9  
--  
ID =5A VDD =400V  
VGS = 10V  
Qgs  
Qgd  
--  
--  
nC  
--  
--  
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