Datasheet > CS5N60A8H

CS5N60A8H

更新时间： 2022-08-28 11:55:15

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CS5N60A8H 数据手册

Huajing Discrete Devices

○

Silicon N-Channel Power MOSFET

CS5N60A8H

General Description：

V_DSS

600

CS5N60A8H, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-220AB, which accords with the RoHS standard.

Features：

I_D

P_D(T_C=25℃)

R_DS(ON)

1.4

Ω

ꢀ Fast Switching

ꢀ

Low ON Resistance(Rdson≤1.6Ω)

ꢀLow Gate Charge (Typical Data: 22nC)

ꢀLow Reverse transfer capacitances(Typical: 14pF)

ꢀ100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Symbol

V_DSS

Parameter

Rating

Units

Drain-to-Source Voltage

600

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

3.6

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Avalanche Energy ,Repetitive

Avalanche Current

320

E_AS

E_AR

8.0

I_AR

Peak Diode Recovery dv/dt

Power Dissipation

4.5

V/ns

dv/dt

0.68

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2008

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