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CS130N10A0 PDF预览

CS130N10A0

更新时间: 2024-10-29 15:18:59
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 535K
描述
TO-263(或D2PAK)

CS130N10A0 数据手册

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Silicon N-Channel Power MOSFET  
CS130N10 A0  
R
General Description  
VDSS  
ID(  
100  
130  
120  
266  
6.7  
V
CS130N10 A0, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the high density Trench  
technology which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. This device is  
suitable for use as a load switch and PWM applications. The  
package form is TO-263, which accords with the RoHS standard.  
Features  
A
A
Silicon limited current)  
ID(  
Package limited)  
PD  
W
RDS(ON)Typ  
m  
l Fast Switching  
l Low ON Resistance(Rdson8.5 m)  
l Low Gate Charge  
l Low Reverse transfer capacitances  
l 100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor, charger, inverter,  
electric vehicle and charging pile.  
AbsoluteTj= 25unless otherwise specified)  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
Continuous Drain Current TC = 25 °C  
100  
V
A
130  
Silicon limited  
ID  
120  
Continuous Drain Current TC = 25 °C(  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current TC = 25 °C  
Gate-to-Source Voltage  
A
Package limited  
83  
A
a1  
480  
A
IDM  
VGS  
±20  
V
a2  
Avalanche Energy  
748  
mJ  
W
EAS  
Power Dissipation TC = 25 °C  
Derating Factor above 25°C  
266  
PD  
2.1  
15055 to 150  
300  
W/  
Operating Junction and Storage Temperature Range  
MaximumTemperature for Soldering  
TJTstg  
TL  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10  
2020V01  

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