Datasheet > CS130N10A0

CS130N10A0

更新时间： 2024-10-29 15:18:59

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	535K
描述
TO-263(或D2PAK)

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CS130N10A0 数据手册

Silicon N-Channel Power MOSFET

CS130N10 A0

○

General Description：

V_DSS

I_D_（

100

130

120

266

6.7

CS130N10 A0, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-263, which accords with the RoHS standard.

Features：

Silicon limited current^）

I_D_（

Package limited^）

R_DS(ON)Typ

mΩ

l Fast Switching

l Low ON Resistance(Rdson≤8.5 mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor, charger, inverter,

electric vehicle and charging pile.

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current T_C= 25 °C

100

130

）

^（Silicon limited

I_D

120

Continuous Drain Current T_C= 25 °C_（

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

Package limited

480

I_DM

V_GS

±20

Avalanche Energy

748

E_AS

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

266

P_D

2.1

150，–55 to 150

300

W/℃

℃

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

T_J，T_stg

T_L

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