Datasheet > CS130N03A3

CS130N03A3

更新时间： 2024-10-29 15:18:59

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	646K
描述
TO-251

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数据手册

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CS130N03A3 数据手册

Silicon N-Channel Power MOSFET

CS130N03 A3

○

General Description：

V_DSS

CS130N03 A3, the silicon N-channel Enhanced

VDMOSFETs, is obtained by advanced Trench Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

I_D

130

（

）

Silicon limited current

I_D

（

）

Package limited current

P_D(T_C=25℃)

R_DS(ON)Typ

1.9

mΩ

miniaturization and higher efficiency. The package form is TO-251,

which accords with the RoHS standard.

Features：

 Fast Switching



Low ON Resistance(Rdson≤2.5mΩ)

 Low Gate Charge

 Low Reverse transfer capacitances(Typical:482pF)

 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（T_J= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

130

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C _（

Pulsed Drain Current T_C= 25 °C _（

I_D

）

Package limited

240

±20

1000

）

I_DM

Package limited

Gate-to-Source Voltage

V_GS

Single Pulse Avalanche Energy

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

E_AS

P_D

0.666

W/℃

℃

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

T_J，T_stg

150，–55 to 150

T_L

300

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