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CS130N03A3 PDF预览

CS130N03A3

更新时间: 2024-10-29 15:18:59
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 646K
描述
TO-251

CS130N03A3 数据手册

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Silicon N-Channel Power MOSFET  
CS130N03 A3  
R
General Description  
VDSS  
30  
V
A
CS130N03 A3, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by advanced Trench Technology  
which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. The transistor  
can be used in various power switching circuit for system  
ID  
130  
60  
Silicon limited current  
ID  
A
Package limited current  
PD(TC=25)  
83  
W
RDS(ON)Typ  
1.9  
mΩ  
miniaturization and higher efficiency. The package form is TO-251,  
which accords with the RoHS standard.  
Features  
Fast Switching  
Low ON Resistance(Rdson2.5m)  
Low Gate Charge  
Low Reverse transfer capacitances(Typical:482pF)  
100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTJ= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
30  
130  
60  
V
A
Continuous Drain Current TC = 25 °C  
Continuous Drain Current TC = 100 °C (  
Pulsed Drain Current TC = 25 °C (  
ID  
A
Package limited  
a1  
240  
±20  
1000  
83  
A
IDM  
Package limited  
Gate-to-Source Voltage  
VGS  
V
a2  
Single Pulse Avalanche Energy  
Power Dissipation TC = 25 °C  
Derating Factor above 25°C  
mJ  
W
EAS  
PD  
0.666  
W/℃  
Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
TJTstg  
15055 to 150  
TL  
300  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10  
2020V01  

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