Datasheet > CRTB550P06N2-G

CRTB550P06N2-G

更新时间： 2024-09-22 17:01:47

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	980K
描述
SOT-223

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中文翻译

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数据手册

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CRTB550P06N2-G 数据手册

CRTB550P06N2-G

Trench P-MOSFET -60V, 46mΩ, -5A

Features

Product Summary

V_DS

-60V

46mΩ

-5A

• Uses CRM advanced Trench technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_{DS(on) typ.}

I_D

100% DVDS Tested

Applications

100% Avalanche Tested

• Motor control and drive

• Electrical tools

• Lithium battery protection

Package Marking and Ordering Information

Part #

Marking

Package

SOT-223

Reel Size

Tape Width

N/A

Qty

Packing

Reel

CRTB550P06N2-G

T550P06N2

N/A

3000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

-60

Continuous drain current

T_A= 25°C

I_D

-5

T_A= 100°C

-3.6

Pulsed drain current (T_A= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (L=0.5mH)

Gate-Source voltage

)

I_{D pulse}

E_AS

-20

V_GS

±18

Power dissipation (T_A= 25°C)

P_tot

2.9

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

T_sold

260

°C

Ver. 1.0

©WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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