Datasheet > CRTD045N04L2P

CRTD045N04L2P

更新时间： 2024-03-03 10:10:17

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	859K
描述
TO-252(或DPAK)

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CRTD045N04L2P 数据手册

Silicon N-Channel Power MOSFET

CRTD045N04L2P

V_DSS

General Description：

I_D

（

）

Silicon limited current

CRTD045N04L2P, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-252, which accords with the RoHS standard.

Features：

（

）

Package limited current

73.5

3.6

mΩ

R_DS(ON)Typ

 Fast Switching



Low ON Resistance(Rdson≤4.5 mΩ)

 Low Gate Charge

 Low Reverse transfer capacitances

 100% Single Pulse avalanche energy Test

 Halogen Free

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

120

Continuous Drain Current T_C= 25 °C _（

）

Silicon limited

I_D

）

Package limited

Continuous Drain Current T_C= 100 °C _（

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

）

Package limited

240

±20

192

73.5

0.59

I_DM

V_GS

Avalanche Energy

E_AS

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

P_D

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

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