Datasheet > CRTD082NE6N

CRTD082NE6N

更新时间： 2024-03-03 10:11:39

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	516K
描述
TO-252(或DPAK)

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数据手册

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CRTD082NE6N 数据手册

CRTD082NE6N

Trench N-MOSFET 65V, 6.9mΩ, 85A

华润微电子(重庆)有限公司

Features

Product Summary

V_DS

65V

• Uses CRM(CQ) advanced Trench MOS technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_{DS(on) typ.}

I_D

6.9mΩ

85A

100% DVDS Tested

Applications

100% Avalanche Tested

• Motor control and drive

• Battery management

• UPS (Uninterrupible Power Supplies)

Package Marking and Ordering Information

Part #

Marking

Package

TO-252

Reel Size

N/A

Tape Width

N/A

Qty

Packing

Reel

CRTD082NE6N

2500pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

340

100

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)

Gate-Source voltage

V_GS

±20

Power dissipation (T_C= 25°C)

P_tot

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

T_sold

260

°C

Rev 1.0

©China Resources Microelectronics (Chongqing) Limited

Page 1

12 3 4 5 6 7...9

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