Silicon P-Channel Power MOSFET
CRTD360P04L2-G
General Description:
VDSS
-40
-20
27.7
28
V
A
CRTD360P04L2-G, the silicon P-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-252, which accords with the RoHS standard.
Features:
ID
PD
W
RDS(ON)Typ
mΩ
Fast Switching
Low ON Resistance(Rdson≤36 mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tj= 25℃ unless otherwise specified)
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
-40
V
A
Continuous Drain Current TC = 25 °C
Continuous Drain Current TC = 100 °C
Pulsed Drain Current TC = 25 °C
Gate-to-Source Voltage
-20
ID
-14.4
A
a1
-80
A
IDM
VGS
±18
46.2
V
a2
Avalanche Energy
mJ
W
EAS
Power Dissipation TC = 25 °C
Derating Factor above 25°C
27.7
PD
0.22
W/℃
℃
Operating Junction and Storage Temperature Range
TJ,Tstg
150,–55 to 150
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2019V01