CRTD900N15N
Trench N-MOSFET 150V, 58mΩ, 23A
华润微电子(重庆)有限公司
Features
Product Summary
VDS
150V
58mΩ
23A
• Uses CRM(CQ) advanced Trench MOS technology
• Extremely low on-resistance RDS(on)
• Excellent QgxRDS(on) product(FOM)
• Qualified according to JEDEC criteria
RDS(on) typ.
ID
100% DVDS Tested
Applications
100% Avalanche Tested
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
Package Marking and Ordering Information
Part #
Marking
Package
TO-252
Reel Size
N/A
Tape Width
N/A
Qty
Packing
Reel
CRTD900N15N
CRTD900N15N
2500
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
VDS
Drain-source voltage
150
V
Continuous drain current
TC = 25°C (Silicon limit)
TC = 25°C (Package limit)
TC = 100°C (Silicon limit)
23
80
15
ID
A
Pulsed drain current (TC = 25°C, tp limited by Tjmax
)
ID pulse
EAS
92
A
mJ
V
Avalanche energy, single pulse (L=0.3mH, Rg=25Ω)
Gate-Source voltage
7
±25
VGS
Power dissipation (TC = 25°C)
Ptot
88
W
°C
Tj , T stg
Operating junction and storage temperature
-55...+150
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
Tsold
260
°C
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