Datasheet > CRTD085N06N2-G

CRTD085N06N2-G

更新时间： 2024-04-09 19:02:40

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1065K
描述
TO-252(或DPAK)

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数据手册

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CRTD085N06N2-G 数据手册

CRTD085N06N2-G

Trench N-MOSFET 60V, 6.5mΩ, 85A

Features

Product Summary

V_DS

60V

• Uses CRM advanced Trench technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_{DS(on) typ.}

I_D

6.5mΩ

85A

(Silicon limit)

100% DVDS Tested

Applications

100% Avalanche Tested

• Motor control and drive

• Electrical tools

• Lithium battery protection

Package Marking and Ordering Information

Part #

Marking

Package

TO-252

Reel Size

Tape Width

N/A

Qty

Packing

Reel

CRTD085N06N2-G

T085N06N2

N/A

2500pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

Continuous drain current

T_C= 25°C (Silicon limit)^a1

T_C= 25°C (Package limit)^a1

T_C= 100°C (Silicon limit)

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (L=0.5mH)

Gate-Source voltage

)

I_{D pulse}

E_AS

240

272

V_GS

±20

Power dissipation (T_C= 25°C)

P_tot

104

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

T_sold

260

°C

Ver. 2.0

©WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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