CRTD110N03L
V
R
DSS
30V
Features
DS(on) Vgs=10V typ.
9mΩ
11mΩ
11mΩ
13mΩ
45A
ò Lead free and Green Device Available
ò Low Rds-on to Minimize Conductive Loss
ò High avalanche Current
max.
R
DS(on) Vgs=4.5V typ.
max.
ID @ Vgs=10V (Silicon limited)
ID (Package limited)
20A
Application
ò Power Tool
ò
ò
Boost Converters for LED Lighting
SMPS
TO252
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
VDSS
Param
Maximum
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
30
±20
45
VGSS
V
TC=25°C (Silicon limited)
TC=100°C (Silicon limited)
TC=25°C (Package limited)
TC=25°C (Silicon limited)
TC=100°C (Silicon limited)
TC=25°C (Package limited)
TC=25°C
32
ID Vgs=10V
20
41
29
20
-
A
Continuous Drain Current
ID Vgs=4.5V
IDP
Pulsed Drain Current
Avalanche Current (L=0.3mH)
Avalanche Energy (L=0.3mH)
A
A
mJ
I
AS
11
18
EAS
TC=25°C
TC=100°C
40
20
-55~175
W
°C
P
D
Maximum Power Dissipation
TJ, TSTG
Junction & Storage Temperature Range
Thermal Characteristics
Symbol
Parameter
Max.
Unit
Thermal resistance, junction to case
3.7
℃/W
R
thJC
thJA
R
Thermal resistance, junction to ambient
86
℃/W
Rev2.0