Silicon N-Channel Power MOSFET
CRTD039N04L2-G
VDSS
40
120
60
V
A
General Description:
ID
ID
(
)
Silicon limited current
CRTD039N04L2-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device can
be used in load switch and power switch applications. The package
form is TO-252, which accords with the RoHS standard.
Features:
A
(
)
Package limited current
PD
99.2
3.0
W
mΩ
RDS(ON)Typ
Fast Switching
Low ON Resistance(Rdson≤3.7mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Halogen Free
Applications:
load switch and power switch applications.
Absolute(Tj= 25℃ unless otherwise specified)
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
40
120
60
V
A
Continuous Drain Current TC = 25 °C
ID
Continuous Drain Current TC = 25 °C (
Continuous Drain Current TC = 100 °C
Pulsed Drain Current TC = 25 °C
Gate-to-Source Voltage
A
)
Package limited
60
A
a1
240
±20
282.2
99.2
0.79
A
IDM
VGS
V
a2
Avalanche Energy
mJ
W
EAS
Power Dissipation TC = 25 °C
Derating Factor above 25°C
PD
W/℃
℃
Operating Junction and Storage Temperature Range
TJ,Tstg
150,–55 to 150
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2021V01