Datasheet > CRTD019N03L2-G

CRTD019N03L2-G

更新时间： 2024-04-09 19:01:14

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	686K
描述
TO-252(或DPAK)

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数据手册

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CRTD019N03L2-G 数据手册

Silicon N-Channel Power MOSFET

CRTD019N03L2-G

V_DSS

260

General Description：

I_D

（

）

Silicon limited current

CRTD019N03L2-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device can

be used in load switch and power switch applications. The package

form is TO-252, which accords with the RoHS standard.

Features：

（

）

Package limited current

166.6

1.4

mΩ

R_DS(ON)Typ

 Fast Switching



Low ON Resistance(Rdson≤1.8mΩ)

 Low Gate Charge

 Low Reverse transfer capacitances

 100% Single Pulse avalanche energy Test

 Halogen Free

Applications：

load switch and power switch applications.

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

260

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 25 °C _（

I_D

）

Package limited

Continuous Drain Current T_C= 100 °C _（

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

）

Package limited

300

±20

858.4

166.6

1.3

I_DM

V_GS

Avalanche Energy

E_AS

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

P_D

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

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