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CRS09(TE85R) PDF预览

CRS09(TE85R)

更新时间： 2024-11-03 14:48:55
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管
页数 文件大小 规格书
5页 179K
描述
DIODE 1.5 A, 30 V, SILICON, RECTIFIER DIODE, S-FLAT-2, Rectifier Diode

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中文翻译

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CRS09(TE85R) 技术参数

生命周期：Active包装说明：S-FLAT-2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.7其他特性：FREE WHEELING DIODE
应用：GENERAL PURPOSE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：R-PDSO-F2JESD-609代码：e0
最大非重复峰值正向电流：30 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-40 °C
最大输出电流：1.5 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
认证状态：Not Qualified最大重复峰值反向电压：30 V
表面贴装：YES技术：SCHOTTKY
端子面层：TIN LEAD端子形式：FLAT
端子位置：DUALBase Number Matches：1

CRS09(TE85R) 数据手册

 浏览型号CRS09(TE85R)的Datasheet PDF文件第2页浏览型号CRS09(TE85R)的Datasheet PDF文件第3页浏览型号CRS09(TE85R)的Datasheet PDF文件第4页浏览型号CRS09(TE85R)的Datasheet PDF文件第5页 
CRS09  
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type  
CRS09  
Switching Mode Power Supply Applications  
Unit: mm  
Portable Equipment Battery Applications  
•
•
•
•
Forward voltage: V  
= 0.46 V (max)  
FM  
Average forward current: I  
= 1.5 A  
F (AV)  
Repetitive peak reverse voltage: V  
= 30 V  
RRM  
Suitable for compact assembly due to small surface-mount package  
“S−FLATTM” (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
30  
V
A
RRM  
I
1.5 (Note 1)  
F (AV)  
Peak one cycle surge forward current  
(non-repetitive)  
I
30 (50 Hz)  
A
FSM  
Junction temperature  
Storage temperature  
T
−40~150  
−40~150  
°C  
°C  
j
JEDEC  
JEITA  
―
―
T
stg  
Note 1: Ta = 84°C  
TOSHIBA  
3-2A1A  
Device mounted on a ceramic board  
Weight: 0.013 g (typ.)  
(board size: 50 mm × 50 mm, land size: 2 mm × 2 mm)  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
= 0.1 A  
= 1.0 A  
= 1.5 A  
⎯
⎯
⎯
⎯
⎯
⎯
0.35  
0.415  
0.43  
0.8  
⎯
⎯
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
0.46  
⎯
I
V
V
V
= 5 V  
RRM (1)  
RRM (2)  
RRM  
RRM  
Repetitive peak reverse current  
Junction capacitance  
μA  
I
= 30 V  
10  
50  
C
= 10 V, f = 1.0 MHz  
R
90  
⎯
pF  
j
Device mounted on a ceramic board  
(soldering land: 2 mm × 2 mm)  
⎯
⎯
70  
Thermal resistance (junction to ambient)  
Thermal resistance (junction to lead)  
R
°C/W  
°C/W  
th (j-a)  
Device mounted on a glass-epoxy  
board  
(soldering land: 6 mm × 6 mm)  
⎯
⎯
⎯
⎯
140  
20  
R
⎯
th (j-ℓ)  
1
2006-11-13  
12345

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