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CRS10I30B

更新时间： 2024-11-04 14:56:43
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 320K
描述
30 V/1 A Schottky Barrier Diode, S-FLAT

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CRS10I30B 数据手册

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CRS10I30B  
TOSHIBA Schottky Barrier Diode  
CRS10I30B  
Secondary Rectification in Switching Regulators  
Unit: mm  
Reverse-Current Protection in Mobile Devices  
•
•
•
•
Repetitive peak reverse voltage : V  
= 30 V  
= 1.0 A  
RRM  
Average forward current  
Peak forward voltage  
: I  
F (AV)  
: V  
= 0.42 V (max) @ I  
FM  
= 1.0 A  
FM  
Small, thin package suitable for high-density board assembly  
TM  
Toshiba Nickname: “S-FLAT  
”
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
30  
Unit  
V
Repetitive peak reverse voltage  
Average forward current  
V
RRM  
I
1.0 (Note 1)  
20 (50 Hz)  
150  
A
A
F (AV)  
1
2
ANODE  
Non-repetitive peak forward surge current  
Junction temperature  
I
FSM  
CATHODE  
T
°C  
°C  
j
Storage temperature  
T
-55 to 150  
stg  
JEDEC  
JEITA  
Note 1: Ta = 51°C  
Device mounted on a glass-epoxy board  
Board size  
: 50 mm × 50 mm  
: 6 mm × 6 mm  
: 1.6 mm  
Soldering land size  
Board thickness  
TOSHIBA  
3-2A1S  
Rectangular waveform : α = 180°, V = 15 V  
R
Weight: 0.013 g (typ.)  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 0.1 A (pulse test)  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.27  
0.35  
0.37  
10  
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
= 0.7 A (pulse test)  
= 1.0 A (pulse test)  
0.42  
I
V
V
V
= 5.0 V (pulse test)  
= 30 V (pulse test)  
RRM (1)  
RRM (2)  
RRM  
RRM  
Repetitive peak reverse current  
Junction capacitance  
µA  
I
20  
60  
C
j
= 10 V, f = 1.0 MHz  
R
50  
pF  
Device mounted on a ceramic board  
board size  
soldering land size  
board thickness  
50 mm × 50 mm  
2 mm × 2 mm  
0.64 mm  
70  
Thermal resistance (junction to ambient)  
Thermal resistance (junction to lead)  
R
°C/W  
°C/W  
th (j-a)  
Device mounted on a glass-epoxy board  
board size 50 mm × 50 mm  
soldering land size 6 mm × 6 mm  
140  
20  
board thickness  
1.6 mm  
R
th (j-ℓ)  
Start of commercial production  
2009-11  
1
2018-11-15  
12345

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