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CRS09(TE85L)

更新时间： 2024-11-03 21:10:47
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管
页数 文件大小 规格书
5页 185K
描述
DIODE 1.5 A, 30 V, SILICON, RECTIFIER DIODE, S-FLAT-2, Rectifier Diode

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中文翻译

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CRS09(TE85L) 技术参数

生命周期：Obsolete包装说明：R-PDSO-F2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.67其他特性：FREE WHEELING DIODE
应用：GENERAL PURPOSE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.46 VJESD-30 代码：R-PDSO-F2
JESD-609代码：e0最大非重复峰值正向电流：30 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-40 °C最大输出电流：1.5 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE认证状态：Not Qualified
最大重复峰值反向电压：30 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子面层：TIN LEAD端子形式：FLAT
端子位置：DUALBase Number Matches：1

CRS09(TE85L) 数据手册

 浏览型号CRS09(TE85L)的Datasheet PDF文件第2页浏览型号CRS09(TE85L)的Datasheet PDF文件第3页浏览型号CRS09(TE85L)的Datasheet PDF文件第4页浏览型号CRS09(TE85L)的Datasheet PDF文件第5页 
CRS09  
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type  
CRS09  
Switching Mode Power Supply Applications  
Unit: mm  
Portable Equipment Battery Applications  
•
•
•
•
Forward voltage: V  
= 0.46 V (max)  
FM  
Average forward current: I  
= 1.5 A  
F (AV)  
Repetitive peak reverse voltage: V  
= 30 V  
RRM  
Suitable for compact assembly due to small surface-mount package  
“S−FLATTM” (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
30  
V
A
RRM  
I
1.5 (Note 1)  
F (AV)  
Peak one cycle surge forward current  
(non-repetitive)  
I
30 (50 Hz)  
A
FSM  
Junction temperature  
Storage temperature  
T
−40~150  
−40~150  
°C  
°C  
j
T
stg  
JEDEC  
JEITA  
―
―
Note 1: Ta = 84°C  
Device mounted on a ceramic board  
(board size: 50 mm × 50 mm, land size: 2 mm × 2 mm)  
TOSHIBA  
3-2A1A  
Weight: 0.013 g (typ.)  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
= 0.1 A  
= 1.0 A  
= 1.5 A  
⎯
⎯
⎯
⎯
⎯
⎯
0.35  
0.415  
0.43  
0.8  
⎯
⎯
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
0.46  
⎯
I
V
V
V
= 5 V  
RRM (1)  
RRM (2)  
RRM  
RRM  
Repetitive peak reverse current  
Junction capacitance  
μA  
I
= 30 V  
10  
50  
C
= 10 V, f = 1.0 MHz  
R
90  
⎯
pF  
j
Device mounted on a ceramic board  
(soldering land: 2 mm × 2 mm)  
⎯
⎯
70  
Thermal resistance (junction to ambient)  
Thermal resistance (junction to lead)  
R
°C/W  
th (j-a)  
Device mounted on a glass-epoxy  
board  
(soldering land: 6 mm × 6 mm)  
⎯
⎯
⎯
⎯
140  
20  
R
⎯
°C/W  
th (j-ℓ)  
Start of commercial production  
2000-04  
1
2013-11-01  
12345

中文翻译

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