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CR02AM-8AAC

更新时间: 2024-10-27 19:56:47
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
5页 67K
描述
Silicon Controlled Rectifier, 1 Element, TO-92, TO-92, 3 PIN

CR02AM-8AAC 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.83
配置:SINGLEJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
触发设备类型:SCRBase Number Matches:1

CR02AM-8AAC 数据手册

 浏览型号CR02AM-8AAC的Datasheet PDF文件第2页浏览型号CR02AM-8AAC的Datasheet PDF文件第3页浏览型号CR02AM-8AAC的Datasheet PDF文件第4页浏览型号CR02AM-8AAC的Datasheet PDF文件第5页 
MITSUBISHI SEMICONDUCTOR THYRISTOR  
CR02AM-8A  
LOW POWER USE  
GLASS PASSIVATION TYPE  
Dimensions  
CR02AM-8A  
OUTLINE DRAWING  
in mm  
φ5.0 MAX  
4.4  
VOLTAGE  
2
1
CLASS  
TYPE  
NAME  
3
T
T
1
2
TERMINAL  
TERMINAL  
1
2
3
GATE TERMINAL  
CIRCUMSCRIBE  
CIRCLE  
1.25 1.25  
φ0.7  
1
3
2
• IT (AV) ........................................................................0.3A  
• VDRM ....................................................................... 400V  
• IGT .........................................................................100µA  
JEDEC : TO-92  
APPLICATION  
Strobe flasher  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
8
VRRM  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
400  
500  
320  
400  
320  
V
V
V
V
V
VRSM  
VR (DC)  
VDRM  
1  
1  
Repetitive peak off-state voltage  
DC off-state voltage  
VD (DC)  
Symbol  
Parameter  
RMS on-state current  
Average on-state current  
Surge on-state current  
Conditions  
Ratings  
0.47  
0.3  
Unit  
A
IT (RMS)  
IT (AV)  
ITSM  
Commercial frequency, sine half wave, 180° conduction, Ta=30°C  
A
60Hz sine half wave 1 full cycle, peak value, non-repetitive  
10  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
0.4  
A s  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward voltage  
Peak gate reverse voltage  
Peak gate forward current  
Junction temperature  
0.1  
W
W
V
0.01  
6
6
V
0.1  
A
–40 ~ +125  
–40 ~ +125  
0.23  
°C  
°C  
g
Tstg  
Storage temperature  
Weight  
Typical value  
1. With gate to cathode resistance RGK=1k.  
Feb.1999  

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