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| 品牌 | Logo | 应用领域 |
| 三菱 - MITSUBISHI |  |
/ |
| 页数 | 文件大小 | 规格书 |
| 5页 | 269K |  |
| 描述 | ||
| Silicon Controlled Rectifier, 300mA I(T), 400V V(DRM) | ||
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| CR02AM-8-E | RENESAS |
获取价格 |
Thyristor Low Power Use |
|
| CR02AM-8-ETZ | RENESAS |
获取价格 |
Thyristor Low Power Use |
|
| CR02AM-8-TB | RENESAS |
获取价格 |
Thyristor Low Power Use |
|
| CR02C05A03-Y05-EF | FOXCONN |
获取价格 |
Interconnection Device, LEAD FREE |
|
| CR030 | VISHAY |
获取价格 |
Current Regulator Diode, 0.3mA I(S), 1V V(L), Silicon |
|
| CR030 | NJSEMI |
获取价格 |
Diode Current Reg. 100V 0.33mA 2-Pin TO-18 |
|
| CR0300 | ETC |
获取价格 |
Thyristors (SiBOD Breakover Devices) |
|
| CR0300SA | LITTELFUSE |
获取价格 |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
|
| CR0300SB | LITTELFUSE |
获取价格 |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
|
| CR0300SC | LITTELFUSE |
获取价格 |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
|
三星深化印度制造布局，供应链本地化进程加速
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意法半导体发布第四代SiC技术，助力电动汽车电驱
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