5秒后页面跳转
CR02AM-8BC PDF预览

CR02AM-8BC

更新时间: 2024-10-27 13:07:03
品牌 Logo 应用领域
三菱 - MITSUBISHI 栅极触发装置可控硅整流器
页数 文件大小 规格书
5页 70K
描述
Silicon Controlled Rectifier, 1 Element, TO-92, TO-92, 3 PIN

CR02AM-8BC 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.65
Is Samacsys:N配置:SINGLE
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM触发设备类型:SCR
Base Number Matches:1

CR02AM-8BC 数据手册

 浏览型号CR02AM-8BC的Datasheet PDF文件第2页浏览型号CR02AM-8BC的Datasheet PDF文件第3页浏览型号CR02AM-8BC的Datasheet PDF文件第4页浏览型号CR02AM-8BC的Datasheet PDF文件第5页 
MITSUBISHI SEMICONDUCTOR THYRISTOR  
CR02AM-8A  
LOW POWER USE  
GLASS PASSIVATION TYPE  
Dimensions  
CR02AM-8A  
OUTLINE DRAWING  
in mm  
φ5.0 MAX  
4.4  
VOLTAGE  
2
1
CLASS  
TYPE  
NAME  
3
T
T
1
2
TERMINAL  
TERMINAL  
1
2
3
GATE TERMINAL  
CIRCUMSCRIBE  
CIRCLE  
1.25 1.25  
φ0.7  
1
3
2
• IT (AV) ........................................................................0.3A  
• VDRM ....................................................................... 400V  
• IGT .........................................................................100µA  
JEDEC : TO-92  
APPLICATION  
Strobe flasher  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
8
VRRM  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
400  
500  
320  
400  
320  
V
V
V
V
V
VRSM  
VR (DC)  
VDRM  
1  
1  
Repetitive peak off-state voltage  
DC off-state voltage  
VD (DC)  
Symbol  
Parameter  
RMS on-state current  
Average on-state current  
Surge on-state current  
Conditions  
Ratings  
0.47  
0.3  
Unit  
A
IT (RMS)  
IT (AV)  
ITSM  
Commercial frequency, sine half wave, 180° conduction, Ta=30°C  
A
60Hz sine half wave 1 full cycle, peak value, non-repetitive  
10  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
0.4  
A s  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward voltage  
Peak gate reverse voltage  
Peak gate forward current  
Junction temperature  
0.1  
W
W
V
0.01  
6
6
V
0.1  
A
–40 ~ +125  
–40 ~ +125  
0.23  
°C  
°C  
g
Tstg  
Storage temperature  
Weight  
Typical value  
1. With gate to cathode resistance RGK=1k.  
Feb.1999  

与CR02AM-8BC相关器件

型号 品牌 获取价格 描述 数据表
CR02AM-8-BC RENESAS

获取价格

0.47A, 400V, SCR, TO-92, SC-43A, 3 PIN
CR02AM-8-BC-A6 RENESAS

获取价格

0.47A, 400V, SCR, TO-92, SC-43A, 3 PIN
CR02AM-8-BC-TB RENESAS

获取价格

0.47A, 400V, SCR, TO-92, SC-43A, 3 PIN
CR02AM8C MITSUBISHI

获取价格

Silicon Controlled Rectifier, 300mA I(T), 400V V(DRM)
CR02AM-8-E RENESAS

获取价格

Thyristor Low Power Use
CR02AM-8-ETZ RENESAS

获取价格

Thyristor Low Power Use
CR02AM-8-TB RENESAS

获取价格

Thyristor Low Power Use
CR02C05A03-Y05-EF FOXCONN

获取价格

Interconnection Device, LEAD FREE
CR030 VISHAY

获取价格

Current Regulator Diode, 0.3mA I(S), 1V V(L), Silicon
CR030 NJSEMI

获取价格

Diode Current Reg. 100V 0.33mA 2-Pin TO-18