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CQDD-25N PDF预览

CQDD-25N

更新时间: 2024-11-26 03:26:39
品牌 Logo 应用领域
CENTRAL 触发装置三端双向交流开关
页数 文件大小 规格书
2页 76K
描述
25 AMP TRIAC 600 THRU 800 VOLTS

CQDD-25N 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
风险等级:5.21Is Samacsys:N
外壳连接:MAIN TERMINAL 2配置:SINGLE
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:25 A
断态重复峰值电压:800 V表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

CQDD-25N 数据手册

 浏览型号CQDD-25N的Datasheet PDF文件第2页 
TM  
Central  
CQDD-25M  
CQDD-25N  
Semiconductor Corp.  
25 AMP TRIAC  
600 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CQDD-25M  
series type is an Epoxy Molded Silicon Triac  
designed for full wave AC control applications  
featuring gate triggering in all four (4) quadrants.  
MARKING CODE: FULL PART NUMBER  
D2PAK CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CQDD  
-25M  
CQDD  
-25N  
UNITS  
Peak Repetitive Off-State Voltage  
V
I
I
600  
800  
V
A
A
A2s  
W
W
A
DRM  
T(RMS)  
TSM  
RMS On-State Current (T =90°C)  
25  
150  
94  
C
Peak One Cycle Surge (t=8.3ms)  
I2t Value for Fusing (t=8.3ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=10µs)  
Peak Gate Voltage (tp=10µs)  
Critical Rate of Rise of On-State Current  
Repetitive (f=60Hz)  
I2t  
P
P
I
40  
GM  
G (AV)  
GM  
1.0  
10  
16  
V
V
GM  
di/dt  
10  
A/µs  
°C  
°C  
°C/W  
°C/W  
Storage Temperature  
Junction Temperature  
Thermal Resistance  
Thermal Resistance  
T
T
Θ
Θ
-40 to +150  
-40 to +125  
60  
stg  
J
JA  
JC  
1.7  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
2.0  
30  
60  
UNITS  
µA  
I
I
I
I
I
Rated V  
Rated V  
DRM  
DRM  
GT  
GT  
H
DRM  
DRM  
, T =125°C  
V =12V, R =10Ω, QUAD I, II, III  
V =12V, R =10Ω, QUAD IV  
mA  
mA  
mA  
mA  
V
V
V
V/µs  
C
11.1  
28.2  
18.4  
1.03  
1.74  
D
L
D
T
L
I =100mA  
50  
V
V
V
V =12V, R =10Ω, QUAD I, II, III  
V =12V, R =10Ω, QUAD IV  
1.50  
2.50  
1.80  
GT  
GT  
TM  
D
L
D
TM  
L
I
=35A, tp=380µs  
2
dv/dt  
V = / V  
, R =∞, T =125°C  
6.0  
3
D
DRM GK  
C
R1 (24-September 2004)  

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