Datasheet > CQDD-8M_10

CQDD-8M_10

更新时间： 2024-11-26 09:30:39

品牌	Logo	应用领域
CENTRAL		三端双向交流开关
页数	文件大小	规格书
2页	400K
描述
SURFACE MOUNT 8 AMP SILICON TRIAC 600 THRU 800 VOLTS

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数据手册

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CQDD-8M_10 数据手册

CQDD-8M

CQDD-8N

www.centralsemi.com

SURFACE MOUNT

8 AMP SILICON TRIAC

600 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CQDD-8M series

type is an Epoxy Molded Silicon Triac designed for full

wave AC control applications featuring gate triggering

in all four (4) quadrants.

MARKING: FULL PART NUMBER

D²PAK CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

CQDD-8M CQDD-8N

600 800

UNITS

Peak Repetitive Off-State Voltage

DRM

RMS On-State Current (T =90°C)

Peak One Cycle Surge, t=8.3ms

8.0

1.0

4.0

T(RMS)

A²s

TSM

I²t

I t Value for Fusing, t=8.3m

Peak Gate Power, tp=10μs

Average Gate Power Dissipation

Peak Gate Current, tp=10μs

Peak Gate Voltage, tp=10μs

Critical Rate of Rise of On-State Current Repetitive, f=60Hz

Operating Junction Temperature

Storage Temperature

G(AV)

di/dt

A/μs

°C

-40 to +125

-40 to +150

°C

stg

Thermal Resistance

°C/W

Thermal Resistance

3.2

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

μA

Rated V

500

DRM

, T =125°C

μA

DRM

V =12V, R =10Ω, QUAD I, II, III

4.5

V =12V, R =10Ω, QUAD IV

I =100mA

4.7

V =12V, R =10Ω, QUAD I, II, III

0.95

1.35

1.30

1.50

2.50

1.75

V =12V, R =10Ω, QUAD IV

=11A, tp=380μs

dv/dt

V = / V

, R =∞, T =125°C

5.0

V/μs

DRM GK

R2 (12-February 2010)

中文翻译

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