CQDD-8N

更新时间： 2024-11-26 03:26:39

品牌	Logo	应用领域
CENTRAL		三端双向交流开关
页数	文件大小	规格书
2页	76K
描述
8.0 AMP TRIAC 600 THRU 800 VOLTS

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中文翻译

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数据手册

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CQDD-8N 数据手册

Central

CQDD-8M

CQDD-8N

Semiconductor Corp.

8.0 AMP TRIAC

600 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CQDD-8M

series type is an Epoxy Molded Silicon Triac

designed for full wave AC control applications

featuring gate triggering in all four (4) quadrants.

MARKING CODE: FULL PART NUMBER

D²PAK CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

CQDD

-8M

CQDD

-8N

UNITS

Peak Repetitive Off-State Voltage

600

800

A²s

DRM

T(RMS)

TSM

RMS On-State Current (T =90°C)

8.0

1.0

4.0

Peak One Cycle Surge (t=8.3ms)

I²t Value for Fusing (t=8.3ms)

Peak Gate Power (tp=10µs)

Average Gate Power Dissipation

Peak Gate Current (tp=10µs)

Peak Gate Voltage (tp=10µs)

Critical Rate of Rise of On-State Current

Repetitive (f=60Hz)

I²t

G (AV)

di/dt

A/µs

°C

°C/W

Storage Temperature

Junction Temperature

Thermal Resistance

-40 to +150

-40 to +125

stg

3.2

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

500

1.50

2.50

1.75

UNITS

µA

V/µs

Rated V

DRM

, T =125°C

V =12V, R =10Ω, QUAD I, II, III

V =12V, R =10Ω, QUAD IV

4.5

4.7

0.95

1.35

1.30

I =100mA

V =12V, R =10Ω, QUAD I, II, III

V =12V, R =10Ω, QUAD IV

=11A, tp=380µs

dv/dt

V = / V

, R =∞, T =125°C

5.0

DRM GK

R1 (24-September 2004)

中文翻译

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