是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | not_compliant |
Factory Lead Time: | 7 weeks | 风险等级: | 1.43 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 1.8 A | 最大漏源导通电阻: | 0.25 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-236 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e6 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
表面贴装: | YES | 端子面层: | Tin/Bismuth (Sn/Bi) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CPH3351_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH3351TL | ONSEMI |
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1800mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE, SC-95, SC-96, SOT-457, 3 P | |
CPH3351-TL-H | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH3355 | SANYO |
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P-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
CPH3355_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH3355-TL-H | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH3356 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH3356_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH3356-TL-H | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH3356-TL-H | ONSEMI |
获取价格 |
Single P-Channel Power MOSFET, -20V, -2.5A, 1 |