生命周期: | Transferred | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.59 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 1.8 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CPH3351-TL-H | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH3355 | SANYO |
获取价格 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
CPH3355_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH3355-TL-H | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH3356 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH3356_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH3356-TL-H | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH3356-TL-H | ONSEMI |
获取价格 |
Single P-Channel Power MOSFET, -20V, -2.5A, 1 | |
CPH3356-TL-W | ONSEMI |
获取价格 |
Single P-Channel Power MOSFET, -20V, -2.5A, 1 | |
CPH3360 | SANYO |
获取价格 |
General-Purpose Switching Device Applications |