Datasheet > CPH3360_12

CPH3360_12

更新时间： 2024-01-14 22:05:47

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
7页	540K
描述
General-Purpose Switching Device Applications

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CPH3360_12 数据手册

CPH3360

Ordering number : ENA0114A

SANYO Sem iconductors

DATA S HEET

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

CPH3360

Features

•

ON-resistance R (on)1=233m (typ.)

4V drive

Halogen free compliance

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

--30

±20

--1.6

--6.4

0.9

DSS

GSS

Drain Current (Pulse)

PW 10 s, duty cycle 1%

≤

Allowable Power Dissipation

Channel Temperature

Storage Temperature

When mounted on ceramic substrate (900mm²0.8mm)

°C

Tch

150

Tstg

--55 to +150

This product is designed to “ESD immunity < 200V ”, so please take care when handling.

Machine Model

Product & Package Information

Package Dimensions

unit : mm (typ)

• Package

: CPH3

7015A-004

• JEITA, JEDEC

: SC-59, TO-236, SOT-23

• Minimum Packing Quantity : 3,000 pcs./reel

CPH3360-TL-H

Packing Type: TL

Marking

2.9

0.15

0.05

0.95

1 : Gate

0.4

Electrical Connection

2 : Source

3 : Drain

SANYO : CPH3

http://semicon.sanyo.com/en/network

61312 TKIM/N2011PE TKIM TC-00002659

No. A0114-1/7

12 3 4 5 6 7

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