Datasheet > CPD06-1N5554

CPD06-1N5554

更新时间： 2024-10-15 14:53:47

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	513K
描述
3A,1000V Bare die,89.000 X 89.000 mils,Rectifier-General Purpose

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CPD06-1N5554 数据手册

CPD06-1N5554

General Purpose Rectifier Die

3.0 Amp, 1000 Volt

www.centralsemi.com

The CPD06-1N5554 is a silicon 3.0 Amp, 1000 Volt general purpose rectiﬁer ideal for all types of

commercial, industrial, entertainment, and computer applications.

MECHANICAL SPECIFICATIONS:

Die Size

87 x 87 MILS

9.8 MILS

Die Thickness

Anode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

64 x 64 MILS

Ni/Au – 5,000Å/1,350Å

2.75 MILS

4 INCHES

Gross Die Per Wafer

1,367

MAXIMUM RATINGS: (T =25°C)

Peak Repetitive Reverse Voltage

DC Blocking Voltage

SYMBOL

UNITS

1000

RRM

RMS Reverse Voltage

700

R(RMS)

Average Forward Current (T =55°C)

3.0

Peak Forward Surge Current, tp=8.3ms

100

FSM

T , T

Operating and Storage Junction Temperature

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise)

SYMBOL

TEST CONDITIONS

V =1000V

MIN

MAX

1.0

UNITS

μA

I =50ꢀA

1100

I =3.0A

1.1

120

4.0

V =0, f=1.0MHz

ꢀs

I =0.5A, I =1.0A, I =0.25A

R1 (7-March 2019)

12 3 4

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