Datasheet > CPD102X-1N5711

CPD102X-1N5711

更新时间： 2024-10-15 14:53:15

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CENTRAL		/
页数	文件大小	规格书
4页	522K
描述
Bare die,9.060 X 9.060 mils,High Voltage Schottky Diode

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CPD102X-1N5711 数据手册

CPD102X-1N5711

Schottky Diode Die

15mA, 70 Volt

www.centralsemi.com

The CPD102X-1N5711 is a silicon epitaxial planar Schottky diode designed for switching

applications requiring low forward voltage drop.

MECHANICAL SPECIFICATIONS:

Die Size

9.0 x 9.0 MILS

5.9 MILS

Die Thickness

Anode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

4.8 MILS DIAMETER

Al - 30,000Å

Au - 9,000Å

2.4 MILS

5 INCHES

Gross Die Per Wafer

210,600

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

RRM

Continuous Forward Current

°C

Operating and Storage Junction Temperature

T , T

stg

-65 to +150

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V =50V

MIN

MAX

200

UNITS

I =10µA

I =1.0mA

410

1.0

2.0

I =15mA

V =0, f=1.0MHz

R0 (28-November 2017)

12 3 4

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