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CPD07-CR6A4GPP PDF预览

CPD07-CR6A4GPP

更新时间: 2024-10-14 14:49:19
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
4页 603K
描述
Rectifier Diode, 1 Phase, 1 Element, 6A, 400V V(RRM), Silicon, DIE-1

CPD07-CR6A4GPP 技术参数

生命周期:Active包装说明:S-XUUC-N1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.40风险等级:5.74
Is Samacsys:N应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:S-XUUC-N1最大非重复峰值正向电流:400 A
元件数量:1相数:1
端子数量:1最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:6 A
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:UNCASED CHIP最大重复峰值反向电压:400 V
最大反向电流:10 µA表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
Base Number Matches:1

CPD07-CR6A4GPP 数据手册

 浏览型号CPD07-CR6A4GPP的Datasheet PDF文件第2页浏览型号CPD07-CR6A4GPP的Datasheet PDF文件第3页浏览型号CPD07-CR6A4GPP的Datasheet PDF文件第4页 
CPD07-CR6A4GPP  
General Purpose Rectifier Die  
6.0 Amp, 400 Volt  
www.centralsemi.com  
The CPD07-CR6A4GPP is a silicon 6.0 Amp, 400 Volt general purpose rectifier ideal for all types  
of industrial, consumer, medical, and power supply applications.  
MECHANICAL SPECIFICATIONS:  
Die Size  
100 x 100 MILS  
10.2 MILS  
Die Thickness  
Anode Bonding Pad Size  
Top Side Metalization  
Back Side Metalization  
Scribe Alley Width  
Wafer Diameter  
82 x 82 MILS  
Ni/Au – 4,500Å/1,000Å  
Ni/Au – 5,000Å/1,000Å  
2.0 MILS  
4 INCHES  
Gross Die Per Wafer  
1,170  
MAXIMUM RATINGS: (T =25°C)  
Peak Repetitive Reverse Voltage  
SYMBOL  
UNITS  
V
A
V
400  
400  
280  
RRM  
DC Blocking Voltage  
V
V
V
R
RMS Reverse Voltage  
V
R(RMS)  
Non-Repetitive Peak Reverse Voltage  
(Halfwave, single phase, 60Hz peak)  
V
480  
6.0  
V
A
RSM  
Average Forward Current (T =60°C)  
A
I
O
Peak Forward Surge Current, tp=8.3ms  
I
400  
A
FSM  
T , T  
Operating and Storage Junction Temperature  
-65 to +150  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise)  
A
SYMBOL  
TEST CONDITIONS  
V =400V  
MIN  
MAX  
10  
UNITS  
µA  
I
R
R
V
I =6.0A  
1.0  
V
F
F
C
V =0, f=1.0MHz  
125  
pF  
J
R
R0 (26-August 2016)  

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