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CP191-CMPT2222A-WN PDF预览

CP191-CMPT2222A-WN

更新时间: 2024-11-09 05:49:23
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CENTRAL /
页数 文件大小 规格书
2页 220K
描述
Transistor

CP191-CMPT2222A-WN 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Base Number Matches:1

CP191-CMPT2222A-WN 数据手册

 浏览型号CP191-CMPT2222A-WN的Datasheet PDF文件第2页 
TM  
PROCESS CP191  
Small Signal Transistor  
NPN - Amp/Switch Transistor Chip  
Central  
Semiconductor Corp.  
PROCESS DETAILS  
Process  
EPITAXIAL PLANAR  
Die Size  
16.5 x 16.5 MILS  
9.0 MILS  
Die Thickness  
Base Bonding Pad Area  
Emitter Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
3.5 x 4.3 MILS  
3.5 x 4.3 MILS  
Al - 30,000Å  
Au - 18,000Å  
GEOMETRY  
GROSS DIE PER 4 INCH WAFER  
41,690  
PRINCIPAL DEVICE TYPES  
2N2219A  
2N2222A  
CMPT2222A  
CMST2222A  
CXT2222A  
CZT2222A  
MD2219A  
PN2222A  
BACKSIDE COLLECTOR  
145 Adams Avenue  
Hauppauge, NY 11788 USA  
Tel: (631) 435-1110  
Fax: (631) 435-1824  
www.centralsemi.com  
R3 (14-August 2006)