CP191V-2N2222A
NPN - Small Signal Transistor Die
www.centralsemi.com
The CP191V-2N2222A is a silicon NPN small signal transistor designed for general purpose
switching applications.
MECHANICAL SPECIFICATIONS:
Die Size
16.5 x 16.5 MILS
7.1 MILS
Die Thickness
B
Base Bonding Pad Size
Emitter Bonding Pad Size
Top Side Metalization
Back Side Metalization
Scribe Alley Width
Wafer Diameter
3.5 x 4.3 MILS
3.5 x 4.3 MILS
Al – 30,000Å
Au-As – 9,000Å
1.96 MILS
E
5 INCHES
Gross Die Per Wafer
62,510
MAXIMUM RATINGS: (T =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
SYMBOL
UNITS
V
V
V
mA
°C
A
V
V
V
75
40
6.0
CBO
CEO
EBO
I
800
-65 to +150
C
T , T
J
stg
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
10
10
UNITS
nA
nA
nA
V
V
V
V
V
V
V
I
I
I
V
V
V
=60V
=60V, V =3.0V
=3.0V
CBO
CEV
EBO
CBO
CEO
EBO
CB
CE
EB
EB
10
BV
BV
BV
I =10μA
75
40
6.0
C
I =10mA
C
I =10μA
E
V
V
V
V
h
h
h
h
h
h
I =150mA, I =15mA
0.3
1.0
1.2
2.0
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
B
B
B
I =500mA, I =50mA
C
I =150mA, I =15mA
0.6
C
I =500mA, I =50mA
C
V
=10V, I =0.1mA
35
50
CE
CE
CE
CE
CE
CE
CE
CB
EB
C
V
V
V
V
V
V
V
V
=10V, I =1.0mA
C
FE
FE
FE
FE
=10V, I =10mA
75
100
50
40
300
C
=10V, I =150mA
300
C
=1.0V, I =150mA
C
=10V, I =500mA
FE
C
f
=20V, I =20mA, f=100MHz
MHz
pF
pF
T
C
C
C
=10V, I =0, f=100kHz
8.0
25
ob
ib
E
=0.5V, I =0, f=100kHz
C
PACKING OPTIONS:
• CP191V-2N2222A-CT: Singulated die in waffle pack; 400 die per tray.
• CP191V-2N2222A-WN: Full wafer, unsawn, 100% tested with reject die inked.
• CP191V-2N2222A-WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked.
R0 (6-March 2015)