Datasheet > CNB2001

CNB2001

更新时间： 2024-11-23 22:28:43

品牌	Logo	应用领域
松下 - PANASONIC		光电传感器
页数	文件大小	规格书
2页	56K
描述
Reflective Photosensor

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CNB2001 数据手册

Reflective Photosensors (Photo Reflectors)

CNB2001

Reflective Photosensor

Unit : mm

Overview

3.4

1.8

0.15

CNB2001 is a small, thin SMD-compatible reflective photosensor

consisting of a high efficiency GaAs infrared light emitting diode

which is integrated with a high sensitivity Darlington phototransistor

in a single resin package.

+0.1

0.05

–0.05

C0.5

Chip

center

Features

Reflow-compatible reflective photosensor

0.85

4-0.7

4-0.5

1.5

Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm)

Visible light cutoff resin is used

High current-transfer ratio

Pin connection

Absolute Maximum Ratings (Ta = 25˚C)

Color of rank

1: Anode

2: Cathode

3: Emitter

4: Collector

Parameter

Symbol Ratings Unit

Reverse voltage (DC)

Forward current (DC)

Power dissipation

Collector current

V_R

I_F

Input (Light

(Note) Tolerance unless otherwise specified is ±0.2

emitting diode)

P_D

I_C

Collector to emitter voltage V_CEO

Output (Photo

transistor)

Emitter to collector voltage V_ECO

^*1Input power derating ratio is

1.0 mW/˚C at Ta ≥ 25˚C.

^*2Output power derating ratio is

Collector power dissipation P_C

˚C

Operating ambient temperature

T_opr–25 to +85

Temperature

Storage temperature

T_stg–40 to +100 ˚C

1.0 mW/˚C at Ta ≥ 25˚C.

Electrical Characteristics (Ta = 25˚C)

Parameter

Symbol

V_F

Conditions

min

typ

max

1.4

Unit

Forward voltage (DC)

Reverse current (DC)

I_F= 20mA

V_R= 3V

1.2

Input

characteristics

I_R

µA

Output characteristics Collector cutoff current

I_CEOV_CE= 10V

1.0

Collector current

I_C

V_CC= 2V, I_F= 4mA, R_L= 100Ω, d = 1mm

0.52

15.0

5.0

Leakage current

I_D

V_CC= 2V, I_F= 4mA, R_L= 100Ω

Transfer

Collector to emitter saturation voltage V_CE(sat)I_F= 4mA, I_C= 0.5mA

1.2

characteristics

t_r^*2V_CC= 2V, I_C= 10mA,

t_f^*2R_L= 100Ω

120

115

Response time

µs

Output Current (IC) measurement

method (see figure below.)

Response time measurement

circuit (see figure below.)

Color indication of classifications

t_r: Rise time

t_f: Fall time

Glass plate

Evaporated Al

Glass plate

Evaporated Al

Class

I_C(µA)

Color

Orange

White

0.52 to 1.94

1.45 to 5.4

4.0 to 15.0

d = 1mm

Sig.IN

Sig.OUT

90%

10%

Light blue

I_F

I_C

V_CC

R_L

Sig.IN

50Ω

Sig. V_CC

OUT

R_L

t_r

t_f

Input and output are handled electrically.

This product is not designed to withstand radiation.

中文翻译

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与CNB2001相关器件

型号	品牌	获取价格	描述	数据表
CNB2001Q	PANASONIC	获取价格	Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.52-1.94mA, 1-Channel, Rectangular, Surfa
CNB2001R	PANASONIC	获取价格	Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 1.45-5.40mA, 1-Channel, Rectangular, Surfa
CNB2002	PANASONIC	获取价格	Diffuse Photoelectric Sensor,
CNB2003	PANASONIC	获取价格	Reflective photosensor
CNB2003Q	PANASONIC	获取价格	Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.52-1.94mA, 1-Channel, Rectangular, Throu
CNB2003R	PANASONIC	获取价格	暂无描述
CNB2003S	PANASONIC	获取价格	暂无描述
CNB2004	PANASONIC	获取价格	Diffuse Photoelectric Sensor,
CNB2-2	MSYSTEM	获取价格	Lightning Surge Protectors for Electronics Equipment M-RESTER
CNB2301	PANASONIC	获取价格	Reflective Photosensor

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