Datasheet > CNB2301Q

CNB2301Q

更新时间： 2024-11-10 06:18:19

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
5页	422K
描述
Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.46-12mA, 1-Channel, Rectangular, Through Hole Mount, 2.70 X 3.40 MM, ULTRAMINIATURE, PLASTIC, PRSMW104-001, 4 PIN

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CNB2301Q 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Reﬂective Photosensors (Photo Reﬂectors)

CNB2301 (ON2270)

Reﬂective Photosensor

For contactless SW and object detection

 Overview

CNB2301 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated

with a high sensitivity darlington phototransistor used as the photo detector in a single resin package.

 Features

 Ultraminiature: 2.7 mm × 3.4 mm

 Visible light cutoff resin is used

 High current transfer ratio

 Applications

 Detection of paper, ﬁlm and cloth

 Detection of position and edge

 Liquid level sensor

 Detection of rotary positioning

 Start, end mark detection of magnetic tape

ꢀAbsolute Maximum Ratings T = 25°C

Parameter

Symbol

P_D

Rating

Unit

Power dissipation

Forward current

Reverse voltage

Input

I_F

(Light emitting diode)

V_R

Collector-emitter voltage

(Base open)

V_CEO

Emitter-collector voltage

(Base open)

V_ECO

Output

(Photo transistor)

Collector current

I_C

P_C

°C

Collector power dissipation

Total power dissipation

P_T

100

Operating ambient temperature

Storage temperature

T_opr

–25 to +85

–30 to +100

stg

°C

Note) The part number in the parenthesis shows conventional part number.

Publication date: October 2008

SHG00051CED

12 3 4 5

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