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CNB2003R PDF预览

CNB2003R

更新时间: 2024-11-07 13:07:03
品牌 Logo 应用领域
松下 - PANASONIC 光电传感器换能器线性位置传感器
页数 文件大小 规格书
3页 96K
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CNB2003R 数据手册

 浏览型号CNB2003R的Datasheet PDF文件第2页浏览型号CNB2003R的Datasheet PDF文件第3页 
Reflective Photosensors (Photo Reflectors)  
CNB2003  
Reflective photosensor  
Unit: mm  
3.4  
1.8  
Non-contact point SW, object sensing  
±.15  
1
3
C±.5  
Chip  
center  
Features  
Reflow-compatible reflective photosensor  
Ultraminiature, thin type: 2.7 mm × 3.4 mm (height: 1.5 mm)  
2
4
±.85  
±.7  
±.5  
1.5  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Input (Light Reverse voltage  
emitting diode) Forward current  
Power dissipation *  
Symbol Rating  
Unit  
V
VR  
IF  
6
50  
75  
35  
mA  
mW  
V
1: Anode  
1
PD  
Color of rank  
2: Cathode  
3: Emitter  
4: Collector  
Output (Photo Collector-emitter voltage VCEO  
transistor)  
(Base open)  
PRSMW104-003 Package  
(Note) Tolerance unless otherwise specified is 0.2  
Emitter-collector voltage VECO  
(Base open)  
6
V
Collector current  
IC  
30  
75  
mA  
mW  
°C  
Note) 1: Input power derating ratio is  
*
2
Collector power dissipation *  
PC  
1.0 mW/°C at Ta 25°C.  
Temperature Operating ambient temperature Topr  
Storage temperature  
25 to +85  
2: Output power derating ratio is  
*
Tstg 40 to +100  
°C  
1.0 mW/°C at Ta 25°C.  
Electrical-Optical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
1.4  
10  
Unit  
V
Input  
Forward voltage  
VF  
IR  
IF = 20 mA  
VR = 3 V  
1.2  
characteristics Reverse current  
µA  
µA  
Output  
Collector-emitter cutoff current ICEO  
VCE = 10 V  
1.0  
characteristics (Base open)  
1
Transfer  
Collector current *  
IC  
ID  
VCC = 2 V, IF = 4 mA, RL = 100 , d = 1 mm 0.52  
VCC = 2 V, IF = 4 mA, RL = 100 Ω  
15.00  
5.0  
mA  
µA  
V
characteristics Dark current  
Collector-emitter saturation voltage VCE(sat) IF = 4 mA, IC = 0.5 mA  
1.2  
2
Rise time *  
tr  
tf  
VCC = 2 V, IC = 10 mA  
RL = 100 Ω  
120  
115  
µs  
2
Fall time *  
Note) 1. Input and output are handled electrically.  
2. This product is not designed to withstand radiation  
3: Rank classification  
*
3. 1: Output current measurement  
*
2: Switching time  
*
method  
measurement circuit  
Rank  
IC (mA)  
Color  
Q
R
S
0.52 to 1.94 1.45 to 5.40 4.00 to 15.00  
Orange White Light blue  
Glass plate  
Evaporated Al  
d = 1 mm  
Glass plate  
tr: Rise time  
tf: Fall time  
Evaporated Al  
d = 1 mm  
Sig. in  
Sig. out  
90%  
10%  
IF  
IC  
VCC  
RL  
Sig. in  
50  
Sig. VCC  
out  
RL  
tr  
tf  
Publication date: April 2004  
SHG00057BED  
1

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