Datasheet > CMT60N03G

CMT60N03G

更新时间： 2024-11-24 06:48:15

品牌	Logo	应用领域
虹冠电子 - CHAMP		/
页数	文件大小	规格书
5页	195K
描述
N-CHANNEL Logic Level Power MOSFET

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中文翻译

获取价格

数据手册

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CMT60N03G 数据手册

CMT60N03G

N-C^HANNELLogic Level Power MOSFET

APPLICATION

FEATURES

Buck Converter High Side Switch

Low ON Resistance

Other Applications

Low Gate Charge

Peak Current vs Pulse Width Curve

Inductive Switching Curves

Improved UIS Ruggedness

V_DSS

30V

R_DS(ON)Typ.

I_D

10.8mΩ

50A

PIN CONFIGURATION

SYMBOL

TO-252

Front View

TO-263

Front View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Source Voltage (Note 1)

Symbol

V_DSS

I_D

Value

Unit

Drain to Current － Continuous Tc = 25℃, V_GS@10V (Note 2)

－ Continuous Tc = 100℃, V_GS@10V (Note 2)

－ Pulsed Tc = 25℃, V_GS@10V (Note 3)

I_D

Fig.3

Fig.6

±20

I_DM

Gate-to-Source Voltage － Continue

V_GS

P_D

Total Power Dissipation

Derating Factor above 25℃

0.5

W/℃

V/ns

℃

Peak Diode Recovery dv/dt (Note 4)

Operating Junction and Storage Temperature Range

Single Pulse Avalanche Energy L=1.1mH,I_D=30 Amps

Maximum Lead Temperature for Soldering Purposes

Maximum Package Body for 10 seconds

Pulsed Avalanche Rating

dv/dt

T_J, T_STG

E_AS

3.0

-55 to 150

500

℃

T_L

300

T_PKG

I_AS

260

℃

Fig.8

THERMAL RESISTANCE

Symbol

R_θJC

Parameter

Junction-to-case

Min

Typ

Max

2.4

Units

℃/W

Test Conditions

Water cooled heatsink, P_Dadjusted for a peak junction

temperature of +150℃

R_θJA

Junction-to-ambient

(PCB Mount)

Junction-to-ambient

Minimum pad area, 2-oz copper, FR-4 circuit board, double

sided

1 cubic foot chamber, free air

℃/W

2006/10/11 Rev1.2

Champion Microelectronic Corporation

Page 1

12 3 4 5

中文翻译

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