Datasheet > CMT60N03N263

CMT60N03N263

更新时间： 2024-11-23 22:40:15

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
8页	306K
描述
N CHANNEL LOGIC LEVEL POWER MOSFET

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中文翻译

获取价格

数据手册

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CMT60N03N263 数据手册

CMT60N03

N-C^HANNELLogic Level Power M^OSFET

APPLICATION

FEATURES

ꢀ

Buck Converter High Side Switch

Other Applications

ꢀ

Low ON Resistance

Low Gate Charge

Peak Current vs Pulse Width Curve

Inductive Switching Curves

Improved UIS Ruggedness

V_DSS

30V

R_DS(ON)Typ.

10.8mΩ

I_D

50A

PIN CONFIGURATION

SYMBOL

TO-252

Front View

TO-263

Front View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Source Voltage (Note 1)

Drain to Current － Continuous Tc = 25℃, V_GS@10V (Note 2)

Symbol

V_DSS

I_D

Value

Unit

－ Continuous Tc = 100℃, V_GS@10V (Note 2)

－ Pulsed Tc = 25℃, V_GS@10V (Note 3)

Gate-to-Source Voltage － Continue

I_D

I_DM

V_GS

P_D

Fig.3

Fig.6

±20

Total Power Dissipation

Derating Factor above 25℃

0.5

3.0

-55 to 150

500

W/℃

V/ns

℃

Peak Diode Recovery dv/dt (Note 4)

Operating Junction and Storage Temperature Range

Single Pulse Avalanche Energy L=1.1mH,I_D=30 Amps

Maximum Lead Temperature for Soldering Purposes

Maximum Package Body for 10 seconds

Pulsed Avalanche Rating

dv/dt

T_J, T_STG

E_AS

T_L

T_PKG

I_AS

℃

300

260

Fig.8

℃

THERMAL RESISTANCE

Symbol

R_θJC

Parameter

Junction-to-case

Min

Typ

Max

2.4

Units

℃/W

Test Conditions

Water cooled heatsink, P_Dadjusted for a peak junction

temperature of +150℃

R_θJA

Junction-to-ambient

(PCB Mount)

Minimum pad area, 2-oz copper, FR-4 circuit board, double

℃/W

sided

Junction-to-ambient

1 cubic foot chamber, free air

2004/05/24 Preliminary

Champion Microelectronic Corporation

Page 1

12 3 4 5 6 7 8

中文翻译

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