Datasheet > CMT70N03

CMT70N03

更新时间： 2024-11-08 21:55:15

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其他 - ETC		/
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4页	265K
描述
N CHANNEL LOGIC LEVEL POWER MOSFET

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中文翻译

获取价格

数据手册

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CMT70N03 数据手册

CMT70N03

N-C^HANNELLogic Level Power MOSFET

APPLICATION

FEATURES

ꢀ

Buck Converter High Side Switch

ꢀ

Low ON Resistance

Other Applications

Low Gate Charge

Peak Current vs Pulse Width Curve

Inductive Switching Curves

Improved UIS Ruggedness

V_DSS

30V

R_DS(ON)Typ.

I_D

6.6mΩ

71A

PIN CONFIGURATION

SYMBOL

TO-252

Front View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Source Voltage (Note 1)

Symbol

V_DSS

I_D

Value

Unit

Drain to Current － Continuous Tc = 25℃, V_GS@10V (Note 2)

－ Continuous Tc = 100℃, V_GS@10V (Note 2)

－ Pulsed Tc = 25℃, V_GS@10V (Note 3)

I_D

I_DM

284

Gate-to-Source Voltage － Continue

V_GS

P_D

±20

Total Power Dissipation

Derating Factor above 25℃

0.53

3.0

W/℃

V/ns

℃

Peak Diode Recovery dv/dt (Note 4)

Operating Junction and Storage Temperature Range

Single Pulse Avalanche Energy

dv/dt

T_J, T_STG

E_AS

-55 to 150

TBD

300

℃

Maximum Lead Temperature for Soldering Purposes

Maximum Package Body for 10 seconds

T_L

T_PKG

260

℃

THERMAL RESISTANCE

Symbol

R_θJC

Parameter

Junction-to-case

Min

Typ

Max

1.9

Units

℃/W

Test Conditions

Water cooled heatsink, P_Dadjusted for a peak junction

temperature of +150℃

R_θJA

Junction-to-ambient

(PCB Mount)

Junction-to-ambient

Minimum pad area, 2-oz copper, FR-4 circuit board, double

sided

1 cubic foot chamber, free air

℃/W

2004/04/13

Champion Microelectronic Corporation

Page 1

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中文翻译

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