Datasheet > CMT60N06

CMT60N06

更新时间： 2024-09-15 22:40:15

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其他 - ETC		/
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描述
N-CHANNEL Logic Level POWER MOSFET

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中文翻译

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数据手册

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CMT60N06 数据手册

CMT60N06

N-C^HANNELLogic Level Power M^OSFET

APPLICATION

FEATURES

ꢀ

DC motor control

UPS

Class D Amplifier

ꢀ

Low ON Resistance

Low Gate Charge

Peak Current vs Pulse Width Curve

Inductive Switching Curves

V_DSS

60V

R_DS(ON)Typ.

15.8mΩ

I_D

60A

PIN CONFIGURATION

SYMBOL

TO-220

Front View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Source Voltage (Note 1)

Symbol

V_DSS

I_D

I_DM

V_GS

P_D

Value

Unit

241

±20

150

1.0

Drain to Current － Continuous Tc = 25℃, V_GS@10V

－ Continuous Tc = 100℃, V_GS@10V

－ Pulsed Tc = 25℃, V_GS@10V (Note 2)

Gate-to-Source Voltage － Continue

Total Power Dissipation

W/℃

V/ns

℃

Derating Factor above 25℃

Peak Diode Recovery dv/dt (Note 3)

dv/dt

T_J, T_STG

E_AS

T_L

T_PKG

I_AS

4.5

Operating Junction and Storage Temperature Range

Single Pulse Avalanche Energy L=144µH,I_D=40 Amps

Maximum Lead Temperature for Soldering Purposes

Maximum Package Body for 10 seconds

Pulsed Avalanche Rating

-55 to 175

500

300

260

℃

THERMAL RESISTANCE

Symbol

R_θJC

Parameter

Junction-to-case

Min

Typ

Max

1.0

Units

℃/W

Test Conditions

Water cooled heatsink, P_Dadjusted for a peak junction

temperature of +175℃

R_θJA

Junction-to-ambient

1 cubic foot chamber, free air

℃/W

2004/05/28 Preliminary ^rev.0.1

Champion Microelectronic Corporation

Page 1

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中文翻译

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