Datasheet > CMT01N60_10

CMT01N60_10

更新时间： 2024-11-18 07:09:07

品牌	Logo	应用领域
虹冠电子 - CHAMP		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
7页	184K
描述
POWER FIELD EFFECT TRANSISTOR

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CMT01N60_10 数据手册

CMT01N60

P^OWERFIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

_DSSand V_DS(on) Specified at Elevated Temperature

PIN CONFIGURATION

SYMBOL

TO-251

TO-92

Front View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current － TO-251(Continuous)

TO-92 (Continuous)

Symbol

Value

1.0

Unit

I_D

0.5

－ Pulsed

I_DM

V_GS

2.0

Gate-to-Source Voltage － Continue

－ Non-repetitive

±30

±40

V_GSM

Total Power Dissipation

TO-251

P_{D (MAX)}

TO-92

-55 to 150

Operating and Storage Temperature Range

T_J, T_STG

E_AS

℃

Single Pulse Drain-to-Source Avalanche Energy － T_J= 25℃

(V_DD= 100V, V_GS= 10V, I_AS= 2A, L = 10mH, R_G= 25Ω)

Thermal Resistance － Junction to Case

θ_JC

θ_JA

T_L

1.0

62.5

260

℃/W

－ Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

℃

2010/12/01 Rev. 1.7

Champion Microelectronic Corporation

Page 1

12 3 4 5 6 7

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