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CMT01N60GN251 PDF预览

CMT01N60GN251

更新时间: 2024-02-21 14:21:21
品牌 Logo 应用领域
虹冠电子 - CHAMP 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 268K
描述
POWER FIELD EFFECT TRANSISTOR

CMT01N60GN251 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

CMT01N60GN251 数据手册

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CMT01N60  
POWER FIELD EFFECT TRANSISTOR  
GENERAL DESCRIPTION  
FEATURES  
This high voltage MOSFET uses an advanced termination  
scheme to provide enhanced voltage-blocking capability  
without degrading performance over time. In addition, this  
advanced MOSFET is designed to withstand high energy in  
avalanche and commutation modes. The new energy  
efficient design also offers a drain-to-source diode with a  
fast recovery time. Designed for high voltage, high speed  
switching applications in power supplies, converters and  
PWM motor controls, these devices are particularly well  
suited for bridge circuits where diode speed and  
commutating safe operating areas are critical and offer  
additional and safety margin against unexpected voltage  
transients.  
‹
‹
‹
Robust High Voltage Termination  
Avalanche Energy Specified  
Source-to-Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
‹
‹
Diode is Characterized for Use in Bridge Circuits  
I
DSS and VDS(on) Specified at Elevated Temperature  
PIN CONFIGURATION  
SYMBOL  
TO-251  
TO-252  
TO-92  
Front View  
Front View  
Front View  
D
G
2
3
1
S
N-Channel MOSFET  
2
3
1
2
3
1
ABSOLUTE MAXIMUM RATINGS  
Rating  
Drain to Current Continuous  
Pulsed  
Symbol  
ID  
Value  
1.0  
Unit  
A
IDM  
9.0  
Gate-to-Source Voltage Continue  
Non-repetitive  
VGS  
VGSM  
PD  
±30  
±40  
V
V
Total Power Dissipation  
W
TO-251/252  
50  
-55 to 150  
20  
Operating and Storage Temperature Range  
TJ, TSTG  
EAS  
Single Pulse Drain-to-Source Avalanche Energy TJ = 25℃  
(VDD = 100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25)  
Thermal Resistance Junction to Case  
mJ  
θJC  
θJA  
TL  
1.0  
62.5  
260  
/W  
Junction to Ambient  
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds  
2006/10/11 Rev. 1.6  
Champion Microelectronic Corporation  
Page 1  

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