Datasheet > CMT01N60GN252

CMT01N60GN252

更新时间： 2024-01-19 21:04:57

品牌	Logo	应用领域
虹冠电子 - CHAMP		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	268K
描述
POWER FIELD EFFECT TRANSISTOR

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技术参数
数据手册

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CMT01N60GN252 技术参数

生命周期：	Contact Manufacturer	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	风险等级：	5.84
雪崩能效等级（Eas）：	20 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	600 V
最大漏极电流 (Abs) (ID)：	1 A	最大漏极电流 (ID)：	1 A
最大漏源导通电阻：	8 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	50 W
最大脉冲漏极电流 (IDM)：	9 A	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON

CMT01N60GN252 数据手册

CMT01N60

P^OWERFIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

_DSSand V_DS(on) Specified at Elevated Temperature

PIN CONFIGURATION

SYMBOL

TO-251

TO-252

TO-92

Front View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current － Continuous

－ Pulsed

Symbol

I_D

Value

1.0

Unit

I_DM

9.0

Gate-to-Source Voltage － Continue

－ Non-repetitive

V_GS

V_GSM

P_D

±30

±40

Total Power Dissipation

TO-251/252

-55 to 150

Operating and Storage Temperature Range

T_J, T_STG

E_AS

℃

Single Pulse Drain-to-Source Avalanche Energy － T_J= 25℃

(V_DD= 100V, V_GS= 10V, I_AS= 2A, L = 10mH, R_G= 25Ω)

Thermal Resistance － Junction to Case

θ_JC

θ_JA

T_L

1.0

62.5

260

℃/W

－ Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

℃

2006/10/11 Rev. 1.6

Champion Microelectronic Corporation

Page 1

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