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CMS14(TE12L,Q)

更新时间： 2024-09-20 14:48:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 140K
描述
DIODE SCHOTTKY 60V 2A M-FLAT

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中文翻译

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CMS14(TE12L,Q) 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：unknown风险等级：5.71
Base Number Matches：1

CMS14(TE12L,Q) 数据手册

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CMS14  
TOSHIBA Schottky Barrier Diode  
CMS14  
Switching Mode Power Supply Applications  
(Output voltage: ≤12 V)  
Unit: mm  
DC/DC Converter Applications  
•
•
•
•
Forward voltage: V  
Average forward current: I  
Repetitive peak reverse voltage: V  
Suitable for compact assembly due to small surface-mount package  
“M−FLATTM” (Toshiba package name)  
= 0.58 V (max)  
FM  
= 2.0 A  
F (AV)  
= 60 V  
RRM  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
60  
V
A
RRM  
I
2.0 (Note 1)  
40 (50 Hz)  
−40~150  
−40~150  
F (AV)  
Non-repetitive peak surge current  
Junction temperature  
I
A
FSM  
T
j
°C  
°C  
Storage temperature range  
T
stg  
Note 1: Tℓ = 112°C  
JEDEC  
JEITA  
―
―
Device mounted on a ceramic board  
Board size: 50 mm × 50 mm  
Soldering size: 2 mm × 2 mm  
Board thickness: 0.64 t  
TOSHIBA  
3-4E1A  
Rectangular waveform (α = 180°), V = 30 V  
R
Weight: 0.023 g (typ.)  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 1.0 A (pulse test)  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
⎯
⎯
⎯
⎯
⎯
0.45  
0.53  
0.6  
25  
⎯
0.58  
⎯
FM (1)  
FM (2)  
FM  
FM  
Peak forward voltage  
= 2.0 A (pulse test)  
I
V
V
V
= 5 V (pulse test)  
= 60 V (pulse test)  
RRM (1)  
RRM (2)  
RRM  
RRM  
Peak repetitive reverse current  
Junction capacitance  
μA  
I
200  
⎯
C
= 10 V, f = 1.0 MHz  
R
77  
pF  
j
Device mounted on a ceramic board  
(board size: 50 mm × 50 mm)  
(soldering land: 2 mm × 2 mm)  
(board thickness: 0.64 t)  
⎯
⎯
⎯
⎯
60  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 6 mm × 6 mm)  
(board thickness: 1.6 t)  
Thermal resistance  
(junction to ambient)  
R
th (j-a)  
°C/W  
135  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 2.1 mm × 1.4 mm)  
(board thickness: 1.6 t)  
⎯
⎯
⎯
⎯
210  
16  
Thermal resistance  
(junction to lead)  
R
th (j-ℓ)  
⎯
°C/W  
1
2006-11-13  
12345

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