Datasheet > CMS10_06

CMS10_06

更新时间： 2024-09-20 03:26:07

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	159K
描述
Switching Mode Power Supply Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CMS10_06 数据手册

CMS10

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

CMS10

Switching Mode Power Supply Applications

Unit: mm

Portable Equipment Battery Applications

•

Forward voltage: V

Average forward current: I

Repetitive peak reverse voltage: V

Suitable for compact assembly due to small surface-mount package

= 0.55 V (max)

= 1.0 A

F (AV)

= 40 V

RRM

“M−FLAT^TM” (Toshiba package name)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Repetitive peak reverse voltage

RRM

1.0

(Ta = 21°C)

Average forward current

(Note 1)

F (AV)

Peak one cycle surge forward current

(non-repetitive)

25 (50 Hz)

FSM

Junction temperature

Storage temperature

−40~150

°C

JEDEC

JEITA

―

stg

Note 1: Device mounted on a glass-epoxy board

TOSHIBA

3-4E1A

(board size: 50 mm × 50 mm, soldering land: 6 mm × 6 mm)

Weight: 0.023 g (typ.)

Note 2: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

= 0.1 A

= 0.5 A

= 1.0 A

⎯

0.34

0.41

0.47

1.0

⎯

FM (1)

FM (2)

FM (3)

Peak forward voltage

0.55

⎯

= 5 V

RRM

Repetitive peak reverse current

Junction capacitance

μA

= 40 V

8.0

500

⎯

= 10 V, f = 1.0 MHz

Device mounted on a ceramic board

(soldering land: 2 mm × 2 mm)

⎯

Thermal resistance

°C/W

th (j-a)

Device mounted on a glass-epoxy

board

⎯

135

(soldering land: 6 mm × 6 mm)

⎯

th (j-ℓ)

2006-11-13

12 3 4 5

中文翻译

下载PDF

与CMS10_06相关器件

型号	品牌	获取价格	描述	数据表
CMS100N04H8-HF	COMCHIP	获取价格	Power Field-Effect Transistor,
CMS10I30A	TOSHIBA	获取价格	30 V/1.0 A Schottky Barrier Diode, M-FLAT
CMS10I40A	TOSHIBA	获取价格	40 V/1.0 A Schottky Barrier Diode, M-FLAT
CMS11	TOSHIBA	获取价格	TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CMS11(T2L,TEMQ)	TOSHIBA	获取价格	2A, 40V, SILICON, RECTIFIER DIODE
CMS11(TE12L,Q)	TOSHIBA	获取价格	DIODE 2 A, 40 V, SILICON, RECTIFIER DIODE, 3-4E1A, M-FLAT-2, Rectifier Diode
CMS11(TE12L,Q,M	TOSHIBA	获取价格	DIODE 2 A, 40 V, SILICON, RECTIFIER DIODE, 3-4E1A, M-FLAT-2, Rectifier Diode
CMS11(TE12L,Q,M(LF)	TOSHIBA	获取价格	Rectifier Diode
CMS11(TE12R)	TOSHIBA	获取价格	DIODE 2 A, 40 V, SILICON, RECTIFIER DIODE, M-FLAT-2, Rectifier Diode
CMS11_06	TOSHIBA	获取价格	Switching Mode Power Supply Applications