Datasheet > CMS100N04H8-HF

CMS100N04H8-HF

更新时间： 2024-02-16 07:07:19

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
6页	765K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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CMS100N04H8-HF 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
Base Number Matches：	1

CMS100N04H8-HF 数据手册

MOSFET

CMS100N04H8-HF

N-Channel

RoHS Device

Halogen Free

PR-PAK

Features

- Advanced DMOS trench technology.

- Fast switching.

- Improve dv/dt capability.

- 100% EAS and Rg guaranteed.

- Green device available.

0.197(5.00)

0.189(4.80)

0.161(4.10)

0.146(3.70)

0.012(0.30)

0.008(0.20)

0.138(3.50)

REF.

0.244(6.20)

0.232(5.90)

0.224(5.70)

0.043(1.10)

REF.

Mechanical data

- Case: PR-PAK

0.008(0.20)

0.002(0.06)

0.024(0.60)

Nom.

0.020(0.51)

0.012(0.30)

0.050(1.27)

Nom.

0.004(0.10)

0.000(0.00)

Circuit Diagram

- G : Gate

- S : Source

- D : Drain

0.045(1.15)

0.033(0.85)

Dimensions in inches and (millimeter)

Maximum Ratings

Symbol

Parameter

Conditions

Value

Unit

Drain-source voltage

VDS

VGS

Gate-source voltage

±20

TC = 25°C

100

Continuous drain current (Note 1)

Pulsed drain current (Note 1, 2)

Total power dissipation (Note 4)

TC = 100°C

IDM

EAS

IAS

400

TC = 25°C

TA = 25°C

135

Single pulse avalanche energy, L=0.1mH (Note 3)

Single pulse avalanche current, L=0.1mH (Note 3)

Operating junction and storage temperature range

Thermal resistance junction-ambient (Note 1)

Thermal resistance junction-case (Note 1)

312

TJ, TSTG

-55 to +150

62.5

0.92

°C

RθJA

Steady state

°C/W

RθJC

Notes: 1. The data tested by surface mounted on a 1inch² FR-4 board with 2oz copper.

2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.

3. The EAS data shows max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=79A.

4. The power dissipation is limited by 150°C junction temperature.

Company reserves the right to improve product design , functions and reliability without notice.

QW-JTR104

REV:A

Page 1

Comchip Technology CO., LTD.

12 3 4 5 6

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