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CMS100N04H8-HF PDF预览

CMS100N04H8-HF

更新时间: 2024-11-10 20:58:15
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
6页 765K
描述
Power Field-Effect Transistor,

CMS100N04H8-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
Base Number Matches:1

CMS100N04H8-HF 数据手册

 浏览型号CMS100N04H8-HF的Datasheet PDF文件第2页浏览型号CMS100N04H8-HF的Datasheet PDF文件第3页浏览型号CMS100N04H8-HF的Datasheet PDF文件第4页浏览型号CMS100N04H8-HF的Datasheet PDF文件第5页浏览型号CMS100N04H8-HF的Datasheet PDF文件第6页 
MOSFET  
CMS100N04H8-HF  
N-Channel  
RoHS Device  
Halogen Free  
PR-PAK  
Features  
- Advanced DMOS trench technology.  
- Fast switching.  
- Improve dv/dt capability.  
- 100% EAS and Rg guaranteed.  
- Green device available.  
0.197(5.00)  
0.189(4.80)  
0.161(4.10)  
0.146(3.70)  
0.012(0.30)  
0.008(0.20)  
D
8
D
D
D
5
7
6
0.138(3.50)  
REF.  
0.244(6.20)  
0.232(5.90)  
0.232(5.90)  
0.224(5.70)  
0.043(1.10)  
REF.  
1
2
3
4
Mechanical data  
- Case: PR-PAK  
S
S
S
G
0.008(0.20)  
0.002(0.06)  
0.024(0.60)  
Nom.  
0.020(0.51)  
0.012(0.30)  
0.050(1.27)  
Nom.  
0.004(0.10)  
0.000(0.00)  
Circuit Diagram  
- G : Gate  
- S : Source  
- D : Drain  
0.045(1.15)  
0.033(0.85)  
D
Dimensions in inches and (millimeter)  
G
S
Maximum Ratings  
Symbol  
Parameter  
Conditions  
Value  
40  
Unit  
V
Drain-source voltage  
VDS  
VGS  
ID  
Gate-source voltage  
±20  
V
TC = 25°C  
100  
Continuous drain current (Note 1)  
Pulsed drain current (Note 1, 2)  
Total power dissipation (Note 4)  
A
A
TC = 100°C  
ID  
63  
IDM  
PD  
PD  
EAS  
IAS  
400  
TC = 25°C  
TA = 25°C  
135  
W
2
Single pulse avalanche energy, L=0.1mH (Note 3)  
Single pulse avalanche current, L=0.1mH (Note 3)  
Operating junction and storage temperature range  
Thermal resistance junction-ambient (Note 1)  
Thermal resistance junction-case (Note 1)  
312  
mJ  
A
79  
TJ, TSTG  
-55 to +150  
62.5  
0.92  
°C  
RθJA  
Steady state  
Steady state  
°C/W  
°C/W  
RθJC  
Notes: 1. The data tested by surface mounted on a 1inch² FR-4 board with 2oz copper.  
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.  
3. The EAS data shows max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=79A.  
4. The power dissipation is limited by 150°C junction temperature.  
Company reserves the right to improve product design , functions and reliability without notice.  
QW-JTR104  
REV:A  
Page 1  
Comchip Technology CO., LTD.  

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