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CMS11(TE12R) PDF预览

CMS11(TE12R)

更新时间: 2024-11-08 15:29:43
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管
页数 文件大小 规格书
5页 167K
描述
DIODE 2 A, 40 V, SILICON, RECTIFIER DIODE, M-FLAT-2, Rectifier Diode

CMS11(TE12R) 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:M-FLAT-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.77其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F2最大非重复峰值正向电流:40 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CMS11(TE12R) 数据手册

 浏览型号CMS11(TE12R)的Datasheet PDF文件第2页浏览型号CMS11(TE12R)的Datasheet PDF文件第3页浏览型号CMS11(TE12R)的Datasheet PDF文件第4页浏览型号CMS11(TE12R)的Datasheet PDF文件第5页 
CMS11  
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type  
CMS11  
Switching Mode Power Supply Applications  
Unit: mm  
Portable Equipment Battery Applications  
Forward voltage: V  
Average forward current: I  
Repetitive peak reverse voltage: V  
= 0.55 V (max)  
FM  
= 2.0 A  
F (AV)  
= 40 V  
RRM  
Suitable for compact assembly due to small surface-mount package  
“MFLATTM” (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
40  
Unit  
V
Repetitive peak reverse voltage  
V
RRM  
I
2.0  
F (AV)  
(Note 1)  
(Ta = 34°C)  
Average forward current  
A
2.0  
(T= 119°C)  
I
F (AV)  
Peak one cycle surge forward current  
(non-repetitive)  
I
30 (50 Hz)  
A
FSM  
JEDEC  
JEITA  
Junction temperature  
Storage temperature  
T
j
40~150  
40~150  
°C  
°C  
T
stg  
TOSHIBA  
3-4E1A  
Weight: 0.023 g (typ.)  
Note 1: Device mounted on a ceramic board  
(board size: 50 mm × 50 mm, soldering land: 2 mm × 2 mm)  
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
= 0.5 A  
= 1.0 A  
= 2.0 A  
0.38  
0.42  
0.49  
2.0  
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
0.55  
V
V
V
= 5.0 V  
RRM  
RRM  
Repetitive peak reverse current  
Junction capacitance  
I
μA  
RRM  
= 40 V  
20.0  
95  
500  
C
= 10 V, f = 1.0 MHz  
R
pF  
j
Device mounted on a ceramic board  
(soldering land: 2 mm × 2 mm)  
60  
R
th (j-a)  
Device mounted on a glass-epoxy  
board  
(soldering land: 6 mm × 6 mm)  
Thermal resistance  
°C/W  
135  
16  
R
th (j-)  
1
2006-11-13  

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