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CMS14(T2L,TEM,Q) PDF预览

CMS14(T2L,TEM,Q)

更新时间: 2024-11-18 20:04:59
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
5页 360K
描述
Rectifier Diode

CMS14(T2L,TEM,Q) 技术参数

生命周期:Active包装说明:R-PDSO-F2
Reach Compliance Code:unknown风险等级:5.68
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.58 VJESD-30 代码:R-PDSO-F2
最大非重复峰值正向电流:40 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:60 V最大反向电流:200 µA
反向测试电压:60 V表面贴装:YES
技术:SCHOTTKY端子形式:FLAT
端子位置:DUALBase Number Matches:1

CMS14(T2L,TEM,Q) 数据手册

 浏览型号CMS14(T2L,TEM,Q)的Datasheet PDF文件第2页浏览型号CMS14(T2L,TEM,Q)的Datasheet PDF文件第3页浏览型号CMS14(T2L,TEM,Q)的Datasheet PDF文件第4页浏览型号CMS14(T2L,TEM,Q)的Datasheet PDF文件第5页 
CMS14  
Schottky Barrier Diode  
CMS14  
Radio-Frequency Rectification in Switching Regulators  
Unit: mm  
DC-DC Converters  
Repetitive peak reverse voltage : V  
= 60 V  
RRM  
Average forward current  
Peak forward voltage  
: I  
= 2.0 A  
F (AV)  
: V  
FM  
= 0.58 V (max)  
Suitable for high-density board assembly due to the use of a small  
Toshiba Nickname: MFLATTM  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
1
2
ANODE  
Repetitive peak reverse voltage  
Average forward current  
V
60  
V
A
RRM  
CATHODE  
I
2.0 (Note 1)  
40 (50 Hz)  
40 to 150  
40 to 150  
F (AV)  
Non-repetitive peak forward surge current  
Junction temperature  
I
A
FSM  
T
°C  
°C  
j
JEDEC  
JEITA  
Storage temperature range  
T
stg  
Note 1: T= 112°C  
Device mounted on a ceramic board  
board size  
Soldering land size  
board thickness  
: 50 mm × 50 mm  
: 2 mm × 2 mm  
: 0.64 mm  
TOSHIBA  
3-4E1S  
Weight: 0.023 g (typ.)  
Rectangular waveform : α = 180°, V = 30 V  
R
Note2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Peak forward voltage  
Symbol  
Test Condition  
= 1 A (pulse test)  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
0.45  
0.53  
0.6  
25  
0.58  
FM (1)  
FM (2)  
FM  
FM  
= 2 A (pulse test)  
I
V
V
V
= 5 V (pulse test)  
= 60 V (pulse test)  
RRM (1)  
RRM (2)  
RRM  
RRM  
Repetitive peak reverse current  
Junction capacitance  
μA  
I
200  
C
j
= 10 V, f = 1 MHz  
R
77  
pF  
Device mounted on a ceramic board  
board size  
soldering land size  
board thickness  
50 mm × 50 mm  
2 mm × 2 mm  
0.64 mm  
60  
Device mounted on a glass-epoxy board  
board size  
soldering land size  
board thickness  
Thermal resistance  
(junction to ambient)  
50 mm × 50 mm  
6 mm × 6 mm  
1.6 mm  
R
135  
°C/W  
°C/W  
th (j-a)  
Device mounted on a glass-epoxy board  
board size  
50 mm × 50 mm  
2.1 mm × 1.4 mm  
1.6 mm  
210  
16  
soldering land size  
board thickness  
Thermal resistance (junction to lead)  
R
th (j-)  
Start of commercial production  
2002-12  
1
2018-10-16  

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