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CMS11(TE12L,Q,M(LF)

更新时间： 2024-01-27 01:25:48
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
5页 173K
描述
Rectifier Diode

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中文翻译

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CMS11(TE12L,Q,M(LF) 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.7二极管类型：RECTIFIER DIODE
Base Number Matches：1

CMS11(TE12L,Q,M(LF) 数据手册

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CMS11  
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type  
CMS11  
Switching Mode Power Supply Applications  
Unit: mm  
Portable Equipment Battery Applications  
•
•
•
•
Forward voltage: V  
Average forward current: I  
Repetitive peak reverse voltage: V  
= 0.55 V (max)  
FM  
= 2.0 A  
F (AV)  
= 40 V  
RRM  
Suitable for compact assembly due to small surface-mount package  
“M−FLATTM” (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
40  
Unit  
V
Repetitive peak reverse voltage  
V
RRM  
I
2.0  
F (AV)  
(Note 1)  
(Ta = 34°C)  
Average forward current  
A
2.0  
(Tℓ = 119°C)  
I
F (AV)  
Peak one cycle surge forward current  
(non-repetitive)  
I
30 (50 Hz)  
A
FSM  
Junction temperature  
Storage temperature  
T
−40~150  
−40~150  
°C  
°C  
j
JEDEC  
JEITA  
―
―
T
stg  
Note 1: Device mounted on a ceramic board  
TOSHIBA  
3-4E1A  
(board size: 50 mm × 50 mm, soldering land: 2 mm × 2 mm)  
Weight: 0.023 g (typ.)  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
= 0.5 A  
= 1.0 A  
= 2.0 A  
⎯
⎯
⎯
⎯
⎯
⎯
0.38  
0.42  
0.49  
2.0  
⎯
⎯
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
0.55  
⎯
V
V
V
= 5.0 V  
RRM  
RRM  
Repetitive peak reverse current  
Junction capacitance  
I
μA  
RRM  
= 40 V  
20.0  
95  
500  
⎯
C
= 10 V, f = 1.0 MHz  
R
pF  
j
Device mounted on a ceramic board  
(soldering land: 2 mm × 2 mm)  
⎯
⎯
60  
R
th (j-a)  
Device mounted on a glass-epoxy  
board  
(soldering land: 6 mm × 6 mm)  
Thermal resistance  
°C/W  
⎯
⎯
⎯
⎯
135  
16  
R
⎯
th (j-ℓ)  
Start of commercial production  
2000-07  
1
2013-11-01  
12345

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