Datasheet > CMPT2222A_10

CMPT2222A_10

更新时间： 2024-09-21 09:27:43

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	324K
描述
SURFACE MOUNT NPN SILICON TRANSISTOR

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CMPT2222A_10 数据手册

CMPT2222A

www.centralsemi.com

SURFACE MOUNT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT2222A

type is an NPN silicon transistor manufactured by the

epitaxial planar process, epoxy molded in a surface

mount package, designed for small signal, general

purpose and switching applications.

MARKING CODE: C1P

SOT-23 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Power Dissipation

600

°C

350

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

μA

=60V

CBO

CEV

EBO

=60V, T =125°C

=60V, V =3.0V

=3.0V

I =10μA

CBO

CEO

EBO

I =10mA

I =10μA

6.0

I =150mA, I =15mA

0.3

1.0

1.2

2.0

CE(SAT)

BE(SAT)

I =500mA, I =50mA

I =150mA, I =15mA

0.6

I =500mA, I =50mA

=10V, I =0.1mA

=10V, I =1.0mA

=10V, I =10mA

=1.0V, I =150mA

=10V, I =150mA

100

300

=10V, I =500mA

=20V, I =20mA, f=100MHz

300

MHz

=10V, I =0, f=1.0MHz

8.0

=0.5V, I =0, f=1.0MHz

R5 (1-February 2010)

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