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CMPDM7120GBKLEADFREE PDF预览

CMPDM7120GBKLEADFREE

更新时间: 2024-02-26 08:42:28
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 327K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

CMPDM7120GBKLEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.76配置:Single
最大漏极电流 (Abs) (ID):1 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.35 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

CMPDM7120GBKLEADFREE 数据手册

 浏览型号CMPDM7120GBKLEADFREE的Datasheet PDF文件第2页 
CMPDM7120G  
SURFACE MOUNT  
N-CHANNEL  
ENHANCEMENT-MODE  
SILICON MOSFET  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMPDM7120G  
is an Enhancement-mode N-Channel Field Effect  
Transistor, manufactured by the N-Channel DMOS  
Process, designed for high speed pulsed amplifier and  
driver applications. This MOSFET offers low r  
and low threshold voltage.  
DS(ON)  
MARKING CODE: C71G  
SOT-23 CASE  
FEATURES:  
Device is Halogen Free by design  
ESD protection up to 2kV  
Low r  
(0.25Ω MAX @ V =1.5V)  
DS(ON)  
GS  
APPLICATIONS:  
Load/Power switches  
Power supply converter circuits  
Battery powered portable equipment  
High current (I =1.0A)  
D
Logic level compatibility  
Small SOT-23 package  
MAXIMUM RATINGS: (T =25°C)  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current (Steady State)  
Maximum Pulsed Drain Current, tp=10μs  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
SYMBOL  
UNITS  
V
V
A
A
A
V
V
I
20  
8.0  
1.0  
4.0  
350  
DS  
GS  
D
I
P
DM  
mW  
°C  
D
stg  
T , T  
-65 to +150  
357  
J
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
, I  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
10  
10  
μA  
μA  
V
V
V
Ω
Ω
Ω
nC  
nC  
nC  
S
pF  
pF  
pF  
ns  
ns  
GSSF GSSR  
DSS  
DS  
BV  
V
V
r
r
r
Q
Q
Q
20  
0.5  
DSS  
GS(th)  
SD  
DS(ON)  
DS(ON)  
DS(ON)  
1.2  
1.1  
0.10  
0.14  
0.25  
0.075  
0.10  
0.17  
2.4  
0.25  
0.65  
4.2  
g(tot)  
gs  
D
D
D
gd  
FS  
rss  
iss  
oss  
g
C
C
C
45  
220  
120  
25  
t
t
on  
off  
D
140  
D
R2 (2-August 2011)  

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