是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.61 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 0.28 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.35 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CMPDM8120 | CENTRAL |
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SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | |
CMPDM8120BKLEADFREE | CENTRAL |
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Transistor | |
CMPDM8120BKPBFREE | CENTRAL |
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Transistor, | |
CMPDM8120TRLEADFREE | CENTRAL |
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Transistor | |
CMPDM8120TRPBFREE | CENTRAL |
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暂无描述 | |
CMPDZA43V | CENTRAL |
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Zener Diode, 43V V(Z), 6.98%, 0.35W, Silicon, Unidirectional, SOT-23, 3 PIN | |
CMPDZA43VLEADFREE | CENTRAL |
获取价格 |
Zener Diode, 43V V(Z), 6.98%, 0.35W, Silicon, Unidirectional, SOT-23, 3 PIN | |
CMPESD24CA | CENTRAL |
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SURFACE MOUNT SILICON DUAL, BI-DIRECTIONAL ESD PROTECTION DIODE | |
CMPF4391 | CENTRAL |
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N-CHANNEL JFET | |
CMPF4391_10 | CENTRAL |
获取价格 |
SURFACE MOUNT N-CHANNEL SILICON JFET |