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CMPDM8120TRPBFREE PDF预览

CMPDM8120TRPBFREE

更新时间: 2024-01-20 14:13:03
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CMPDM8120TRPBFREE 数据手册

 浏览型号CMPDM8120TRPBFREE的Datasheet PDF文件第2页 
CMPDM8120  
SURFACE MOUNT  
P-CHANNEL  
ENHANCEMENT-MODE  
SILICON MOSFET  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMPDM8120 is  
an Enhancement-mode P-Channel Field Effect  
Transistor, manufactured by the P-Channel DMOS  
Process, designed for high speed pulsed amplifier and  
driver applications. This MOSFET offers low r  
and low threshold voltage.  
DS(ON)  
MARKING CODE: C8120  
SOT-23 CASE  
FEATURES:  
APPLICATIONS:  
• Load/Power switches  
• Power supply converter circuits  
• Battery powered portable equipment  
• Low r  
DS(ON)  
• Low threshold voltage  
• Logic level compatibility  
• Small SOT-23 package  
MAXIMUM RATINGS: (T =25°C)  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current (Steady State)  
Continuous Drain Current, t 5.0s  
Continuous Source Current (Body Diode)  
Maximum Pulsed Drain Current, tp=10μs  
Maximum Pulsed Source Current, tp=10μs  
Power Dissipation  
SYMBOL  
UNITS  
V
V
mA  
mA  
mA  
A
A
mW  
°C  
A
V
V
I
I
I
20  
8.0  
860  
950  
360  
DS  
GS  
D
D
S
I
I
P
4.0  
4.0  
350  
-65 to +150  
357  
DM  
SM  
D
stg  
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
J
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
1.0  
5.0  
24  
0.76  
MAX  
50  
500  
UNITS  
nA  
nA  
V
V
V
mΩ  
mΩ  
mΩ  
mΩ  
S
I
I
, I  
V
=8.0V, V =0  
GSSF GSSR GS  
DSS  
DS  
V
V
V
V
V
V
V
V
V
V
V
V
V
=20V, V =0  
DS  
GS  
GS  
=0, I =250μA  
BV  
V
V
20  
0.45  
DSS  
GS(th)  
SD  
D
=V , I =250μA  
1.0  
0.9  
150  
142  
200  
240  
DS GS  
D
=0, I =360mA  
GS  
GS  
GS  
GS  
GS  
DS  
DS  
DS  
DS  
DD  
S
r
r
r
r
=4.5V, I =0.95A  
85  
85  
130  
190  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
FS  
rss  
iss  
D
D
D
D
=4.5V, I =0.77A  
=2.5V, I =0.67A  
=1.8V, I =0.2A  
=10V, I =810mA  
g
2.0  
D
C
C
C
=16V, V =0, f=1.0MHz  
=16V, V =0, f=1.0MHz  
GS  
=16V, V =0, f=1.0MHz  
80  
200  
60  
pF  
pF  
pF  
GS  
oss  
GS  
t
=10V, V =4.5V, I =950mA,  
GS  
on  
D
R =6Ω  
20  
25  
ns  
ns  
G
t
V
=10V, V =4.5V, I =950mA,  
off  
DD  
GS  
D
R =6Ω  
G
R1 (27-January 2010)  

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